BD677晶体管资料
BD677(A)别名：BD677(A)三极管、BD677(A)晶体管、BD677(A)晶体三极管
BD677(A)生产厂家：德国AEG公司_美国摩托罗拉半导体公司_法国巴黎珊斯
BD677(A)制作材料：Si-N+R+Di
BD677(A)性质：低频或音频放大 （LF）_功率放大 （L）
BD677(A)封装形式：直插封装
BD677(A)极限工作电压：60V
BD677(A)最大电流允许值：4A
BD677(A)最大工作频率：>10MHZ
BD677(A)引脚数：3
BD677(A)最大耗散功率：40W
BD677(A)放大倍数：β>750
BD677(A)图片代号：B-21
BD677(A)vtest：60
BD677(A)htest：10000100
- BD677(A)atest：4
BD677(A)wtest：40
BD677(A)代换 BD677(A)用什么型号代替：BD263,BD777,FD50B,2N6038,
BD677价格
参考价格：￥0.9391
型号：BD677 品牌：STMICROELECTRONICS 备注：这里有BD677多少钱，2026年最近7天走势，今日出价，今日竞价，BD677批发/采购报价，BD677行情走势销售排行榜，BD677报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
BD677 | Plastic Medium?뭁ower Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, | ONSEMI 安森美半导体 |   | |
BD677 | NPN PLASTIC POWER DARLINGTON TRANSISTORS NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 | CDIL | | |
BD677 | NPN SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER | CENTRAL | | |
BD677 | Plastic Medium-Power Silicon NPN Darlingtons Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar | MOTOROLA 摩托罗拉 | | |
BD677 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682 | COMSET | | |
BD677 | Silicon NPN Darligton Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD676/678/680 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications | ISC 无锡固电 | | |
BD677 | Silicon NPN Power Transistor DESCRIPTION · Collector–Emitter Breakdown Voltage— : V(BR)CEO = 60V ·DC Current Gain— : hFE = 750(Min) @ IC= 1.5 A ·Complement to Type BD678 APPLICATIONS · Designed for use as output devices in complementary general-purpose amplifier applications. | ISC 无锡固电 | | |
BD677 | Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD677 | SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682 | COMSET | | |
BD677 | Silicon NPN Darligton Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD676/678/680 • DARLINGTON • High DC current gain APPLICATIONS • For use as output devices in complementary general–purpose amplifier applications | SAVANTIC | | |
BD677 | PNP SILICON DARLINGTON TRANSISTORS PNP Silicon Darlington Transistors Epibase power darlington transistors (40W) | SIEMENS 西门子 | | |
BD677 | NPN SILICON DARLINGTON TRANSISTORS PNP Silicon Darlington Transistors Epibase power darlington transistors (40W) | SIEMENS 西门子 | | |
BD677 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD677 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD677 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD677 | Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | |
BD677 | NPN PLASTIC POWER DARLINGTON TRANSISTORS NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 | TEL | | |
BD677 | 中等功率 NPN 达林顿双极功率晶体管 The Medium Power NPN Darlington Bipolar Power Transistor is for use as output devices in complementary general-purpose amplifier applications. • High DC Current GainhFE = 750 (Min) @ IC = 1.5 and 2.0 Adc\n• Monolithic Construction\n• BD675, 675A, 677, 677A, 679, 679A, 681 are complementary with BD676, 676A, 678, 678A, 680, 680A, 682\n• BD677, 677A, 679, 679A are equivalent to MJE 800, 801, 802, 803\n• Pb-Free Packages are Available; | ONSEMI 安森美半导体 | | |
BD677 | 封装/外壳：TO-225AA，TO-126-3 包装：散装 描述：TRANS NPN DARL 60V 4A TO126 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | ONSEMI 安森美半导体 | | |
BD677 | 封装/外壳：TO-225AA，TO-126-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS NPN DARL 60V 4A SOT32-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 | STMICROELECTRONICS 意法半导体 | | |
BD677 | Trans Darlington NPN 60V 4A 3-Pin TO-126 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | |
BD677 | Transistor | COMSET | | |
BD677 | COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：252.33 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | |
BD677 | NPN SILICON POWER DARLINGTON TRANSISTOR 文件：332.11 Kbytes Page：2 Pages | CENTRAL | | |
BD677 | Plastic Medium?좵ower Silicon NPN Darlingtons 文件：109.23 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | |
Stepping Motor Driver Description BD6775EFV is a general-purpose stepping motor driver for OA Equipment. This drivers a bipolar type, available for 2 phase, 1-2 phase, and W1-2 phase motors. Features 1) MOS FET output(External diode is not necessary.) 2) Output OFF time is determined by external C, R valu | ROHM 罗姆 | | ||
NPN PLASTIC POWER DARLINGTON TRANSISTORS NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 | TEL | | ||
Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
Complementary power Darlington transistors Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
Medium Power Linear and Switching Applications Medium Power Linear and Switching Applications • Medium Power Darlington TR • Complement to BD676A, BD678A, BD680A and BD682 respectively | FAIRCHILD 仙童半导体 | | ||
NPN SILICON POWER DARLINGTON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR BD675 Series types are NPN Silicon Darlington Power Transistors, available in the plastic TO-126 package, and are designed for audio and video output applications. MARKING: FULL PART NUMBER | CENTRAL | | ||
Plastic Medium?뭁ower Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, | ONSEMI 安森美半导体 | | ||
NPN PLASTIC POWER DARLINGTON TRANSISTORS NPN PLASTIC POWER DARLINGTON TRANSISTORS Complementary BD676, 676A, 678, 678A, 680, 680A, 682 & 684 | CDIL | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line | STMICROELECTRONICS 意法半导体 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications | ISC 无锡固电 | | ||
Plastic Medium-Power Silicon NPN Darlingtons This series of plastic, medium-power silicon NPN Darlington transistors can be used as output devices in complementary general-purpose amplifier applications. Features • High DC Current Gain: hFE = 750(Min) @Ic = 1.5 and 2.0 Adc • Monolithic Construction • BD675. 675A, 677, 677A. 679, 679A, 68 | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体公司 | | ||
Silicon NPN Power Transistors DESCRIPTION • With TO-126 package • Complement to type BD676A/678A/680A/682 • DARLINGTON APPLICATIONS • For medium power linear and switching applications | SAVANTIC | | ||
SILICON DARLINGTON POWER TRANSISTORS SILICON DARLINGTON POWER TRANSISTORS The BD675/A-BD677/A-BD679/A-BD681/A are NPN transistors mounted in Jedec TO-126 plastic package. They are eptaxial-base transistors in monolithic Darlington circuit for audio and video applications. PNP complements are BD676/A - BD678/A - BD680/A - BD682 | COMSET | | ||
Plastic Medium-Power Silicon NPN Darlingtons Plastic Medium-Power Silicon NPN Darlingtions . . . for use as output devices in complementary general–purpose amplifier applications. • High DC Current Gain — hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, 681 are complementar | MOTOROLA 摩托罗拉 | | ||
Plastic Medium?뭁ower Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, | ONSEMI 安森美半导体 | | ||
Plastic Medium?뭁ower Silicon NPN Darlingtons This series of plastic, medium−power silicon NPN Darlington transistors can be used as output devices in complementary general−purpose amplifier applications. Features • High DC Current Gain: hFE = 750 (Min) @ IC = 1.5 and 2.0 Adc • Monolithic Construction • BD675, 675A, 677, 677A, 679, 679A, | ONSEMI 安森美半导体 | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：252.33 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
Plastic Medium?좵ower Silicon NPN Darlingtons 文件：109.23 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Medium Power Linear and Switching Applications 文件：44.93 Kbytes Page：4 Pages | FAIRCHILD 仙童半导体 | | ||
Medium Power Linear and Switching Applications 文件：230.32 Kbytes Page：4 Pages | FAIRCHILD 仙童半导体 | | ||
NPN Epitaxial Silicon Transistor 文件：230.32 Kbytes Page：4 Pages | FAIRCHILD 仙童半导体 | | ||
NPN SILICON POWER DARLINGTON TRANSISTOR 文件：332.11 Kbytes Page：2 Pages | CENTRAL | | ||
Silicon NPN Power Transistors 文件：230.99 Kbytes Page：3 Pages | FS | | ||
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS 文件：252.33 Kbytes Page：6 Pages | STMICROELECTRONICS 意法半导体 | | ||
Plastic Medium-Power Silicon NPN Darlingtons 文件：87.33 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Medium Power Linear and Switching Applications 文件：230.32 Kbytes Page：4 Pages | FAIRCHILD 仙童半导体 | | ||
Plastic Medium-Power Silicon NPN Darlingtons 文件：87.33 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Plastic Medium-Power Silicon NPN Darlingtons 文件：87.33 Kbytes Page：4 Pages | ONSEMI 安森美半导体 | | ||
Multi TOPLED Cathodes On One Side Features ● P-LCC-4 package ● color of package: white ● for use as optical indicator ● for backlighting, optical coupling into light pipes and lenses ● both chips can be controlled separately ● high signal efficiency possible by color change of the LED ● with appropriate controlling it is po | SIEMENS 西门子 | |
BD677产品属性
- 类型
描述
- Marketing Status：
Active
- Grade：
Industrial
- Transistor Polarity：
NPN
- Collector-Emitter Voltage_max(V)：
60
- Collector-Base Voltage_max(V)：
60
- Collector Current_abs_max(A)：
4
- Dc Current Gain_min：
750
- Test Condition for hFE (IC)：
1.5
- Test Condition for hFE (VCE)_spec(V)：
3
- VCE(sat)_max(V)：
2.5
- Test Condition for VCE(sat) - IC：
1.5
- Test Condition for VCE(sat) - IB_spec(mA)：
30
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
2021+ |
TSSOP24 |
6800 |
原厂原装,欢迎咨询 |
|||
STM |
NA |
16355 |
一级代理 原装正品假一罚十价格优势长期供货 |
||||
ST/意法 |
2025+ |
SOT-32(TO-126) |
4000 |
原装进口价格优 请找坤融电子! |
|||
STMicroelectronics |
25+ |
达林顿管 |
5864 |
原装原标原盒 给价就出 全网最低 |
|||
ST |
23+ |
TO-126 |
3200 |
绝对全新原装!优势供货渠道!特价!请放心订购! |
|||
ST |
23+24 |
TO-126 |
28950 |
原装现货.优势热卖.终端BOM表可配单 |
|||
ST |
23+ |
NA |
19587 |
专业电子元器件供应链正迈科技特价代理特价，原装元器件供应，支持开发样品 |
|||
ST/意法 |
23+ |
NA |
12730 |
原装正品代理渠道价格优势 |
|||
ST/意法 |
2023+ |
TO-126 |
6000 |
一级代理优势现货,全新正品直营店 |
|||
MOT |
25+ |
QFP |
3200 |
全新原装、诚信经营、公司现货销售 |
BD677芯片相关品牌
BD677规格书下载地址
BD677参数引脚图相关
- C80
- c62f
- c430p
- c3055
- c3000
- c2073
- c20001
- c2000
- c188
- c1209
- c1008
- c1000
- bul128a
- bul128
- bu406
- bq5
- biss0001
- bga
- bf419
- BDM
- BD708
- BD707
- BD706
- BD705
- BD702
- BD701
- BD700(A)
- BD699(A)
- BD698(A)
- BD697(A)
- BD696(A)
- BD695(A)
- BD684
- BD683
- BD682
- BD681A
- BD681
- BD680G
- BD680CT
- BD680CS
- BD680AG
- BD680A
- BD680(A)
- BD680
- BD679G
- BD679AG
- BD679A
- BD679(A)
- BD679
- BD678G
- BD678AG
- BD678A
- BD678(A)
- BD678
- BD677G
- BD677AS
- BD677AG
- BD677A
- BD677(A)
- BD676G
- BD676AG
- BD676A
- BD676(A)
- BD676
- BD675G
- BD675AS
- BD675AG
- BD675A
- BD675(A)
- BD675
- BD6701F
- BD670
- BD664(A,B)
- BD663(A,B)
- BD662K
- BD662
- BD661K
- BD661
- BD660CT
- BD660CS
- BD6551G
- BD6550G
- BD6538G
- BD652F
- BD6522F
- BD6520F
- BD652
- BD651F
- BD651
- BD650F
- BD650
- BD649F
- BD649
- BD648F
- BD648
- BD647F
- BD647
BD677数据表相关新闻
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2013-3-5
DdatasheetPDF页码索引
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