Slot-type Photomicrosensor (Non-modulated)

Global Standard Slot-type photomicrosensors with 50- to 100-mA direct switching capacity. • Series includes models that enable switching between dark-ON and light-ON operation. • Response frequency as high as 1 kHz. • Easy operation monitoring with bright light indicator. • Wide operating volt

封装/外壳：模块，连接器，槽型 包装：散装 描述：SENSOR OPTICAL 5MM MOD SLOT TYPE 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

EE-SX670A - 光传感器(开关), 透射型

Photomicrosensor with Dark-ON Indicator in Variety of Mounting Styles

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Photomicrosensor with 50- to 100-mA direct switching capacity for built-in application.

文件：1.56654 Mbytes Page：13 Pages

Slot-type Photomicrosensor (Non-modulated)

文件：470.47 Kbytes Page：9 Pages

FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l