All units are in millimeters unless otherwise indicated.

■ Features • Wide model with a 9.5-mm-wide slot. • Light-receiving element and amplification circuits contained in one chip. • Can use a power supply voltage of 4.5 to 16 V. • Connects directly to C-MOS or TTL. • Dark-ON Sensor: EE-SX3160-W11 • Light-ON Sensor: EE-SX4160-W11 • Pre-wired Se

封装/外壳：模块，PC 引脚，槽型 包装：袋 描述：SENSOR OPTICAL 3.2MM MODULE SLOT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

封装/外壳：模块，开槽 包装：袋 描述：SENSOR OPTICAL 5MM MODULE SLOT 传感器，变送器 光学传感器 - 光电遮断器 - 槽型 - 逻辑输出

微型光电传感器

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

微型光电传感器

微型光电传感器

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

Photo IC output (Dark-ON / Light ON)

文件：1.92272 Mbytes Page：6 Pages

HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR

DESCRIPTION The device is manufactured using high voltage Multi-Epitaxial Mesa technology for cost-effective high performance. It uses a Hollow Emitter structure to enhance switching speeds. The BUL series is designed for use in lighting applications and low cost switch-mode power supplies. ■ S

RF & MICROWAVE TRANSISTORS HF SSB APPLICATIONS

DESCRIPTION The SD1729 is a Class AB 28 V epitaxial silicon NPN planar transistor designed primarily for SSB communications. This device utilizes emitter ballasting to achieve extreme ruggedness under severe operating conditions. ■ OPTIMIZED FOR SSB ■ 30 MHz ■ 28 VOLTS ■ IMD −30 dB ■ COMMON

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

Dual Low-Power, 120MHz Op Amp

文件：167.92 Kbytes Page：6 Pages

3.0 mm X 7.0 mm Series

文件：32.159 Kbytes Page：1 Pages