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型号 功能描述 生产厂家 企业 LOGO 操作
EDI88128C

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

EDI88128C

128KX8 MONOLITHIC SRAM, SMD 5962-89598

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied.\nThe second chip select line (CS2) ■ Access Times of 70, 85, 100ns\n■ Available with Single Chip Selects (EDI88128) or Dual Chip Selects (EDI88130)\n■ 2V Data Retention (LP Versions)\n■ CS# and OE# Functions for Bus Control\n■ TTL Compatible Inputs and Outputs\n■ Fully Static, No Clocks\n■ Organized as 128Kx8\n■ Industrial, Military ;

MICROCHIP

微芯科技

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 MONOLITHIC SRAM, SMD 5962-89598

The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

MICROCHIP

微芯科技

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

128Kx8 Monolithic SRAM, SMD 5962-89598

The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power

WEDC

EDI88128C产品属性

  • 类型

    描述

  • 型号

    EDI88128C

  • 制造商

    WEDC

  • 制造商全称

    White Electronic Designs Corporation

  • 功能描述

    128Kx8 MONOLITHIC SRAM, SMD 5962-89598

更新时间:2026-5-24 15:35:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
EDI
23+
CDIP32
1000
原装正品,假一罚十
PHI
22+
DIP32
8000
原装正品支持实单
WHITE
三年内
1983
只做原装正品
EDI
22+
O-NEW DIP 军工
20000
公司只有原装 品质保证
IDT
最新
CDIP
3647
莱克讯每片来自原厂!价格超越代理!只做进口原装!
24+
DIP
2
EDI
24+
SBCDIP
1235
原装优势现货
23+
2090
N/A
20+
QFP镀金陶瓷
3242
英卓尔科技,进口原装现货!
EDI
0710+
CDIP
47
一级代理,专注军工、汽车、医疗、工业、新能源、电力

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