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型号	功能描述	生产厂家企业	LOGO
EDI88128C	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128C	128KX8 MONOLITHIC SRAM, SMD 5962-89598	WEDC	WEDC
EDI88128CDXCB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CS	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CXCB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128C100CB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598	Microchip 微芯科技	Microchip
EDI88128CDXCB	128Kx8 Monolithic SRAM, SMD 5962-89598	Microchip 微芯科技	Microchip

EDI88128C产品属性

类型
描述
型号
EDI88128C
制造商
WEDC
制造商全称
White Electronic Designs Corporation
功能描述
128Kx8 MONOLITHIC SRAM, SMD 5962-89598

EDI88128C供应商更多...

更新时间：2025-11-18 23:00:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市得捷芯城科技有限公司	EDI88128CS45NB	EDI	24+	NA/	3270	原装现货,当天可交货,原型号开票	询价
上海意淼电子科技有限公司	EDI88128CS20MC		23+		20000	全新原装假一赔十	询价
深圳市益百分电子有限公司	EDI88128CS20MC			91+	7	全新原装进口自己库存优势	询价
深圳市科芯源微电子有限公司	EDI88128CS45NB	EDI	25+	NA	20	原装正品,假一罚十!	询价
深圳市威雅利发展有限公司	EDI88128CA25CB	EDI	0710+	CDIP	47	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
深圳市科恒伟业电子有限公司	EDI88128C70CB	EDI	2450+	CDIP32	9850	只做原厂原装正品现货或订货假一赔十!	询价
标准国际(香港)有限公司	EDI88128CS35TC	WHITE ELECTRONIC DESIGNS	25+		6	公司优势库存热卖中!	询价
深圳市赛美科科技有限公司	EDI88128CS20CC	EDI		DIP	3350	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市昌和盛利电子有限公司	EDI88128CS45CB	AD	NEW	DIP28	9827	代理全系列销售,全新原装正品,价格优势,长期供应,量大可订	询价
深圳市诚利顺电子科技有限公司	EDI88128CS20CC	EDI	23+	DIP	1800	十七年VIP会员,诚信经营，一手货源，原装正品可零售！	询价

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EDI88128C产品属性

EDI88128C供应商更多...

EDI88128C芯片相关品牌

EDI88128C规格书下载地址

EDI88128C参数引脚图相关

EDI88128C数据表相关新闻

EDU36311A/OEM/903

ECS-RTC-3225-5699C3 低功耗I2C RTC

EDS102SZ

EDZVT2R3.0B：ROHM，SOD-52380K原装现货

EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H

EDF8164A3MA-CD-F-R有货的

DdatasheetPDF页码索引