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型号	功能描述	生产厂家&企业	LOGO
EDI88128C	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CDXCB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CS	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CXCB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC

EDI88128C产品属性

类型
描述
型号
EDI88128C
制造商
WEDC
制造商全称
White Electronic Designs Corporation
功能描述
128Kx8 MONOLITHIC SRAM, SMD 5962-89598

EDI88128C供应商更多...

更新时间：2025-8-7 18:12:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市威雅利发展有限公司	EDI88128CA25CB	EDI	0710+	CDIP	47	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价
标准国际(香港)有限公司	EDI88128CS35TC	WHITE ELECTRONIC DESIGNS	9328		6	公司优势库存热卖中!	询价
深圳市航润创能电子集团有限公司	EDI88128CS25TB	EDI	21+	O-NEW DIP 军工	6	原装现货假一赔十	询价
深圳市赛尔通科技有限公司	EDI88128CS25ZI		23+		2090		询价
深圳市欧立现代科技有限公司	EDI88128CS25CC		24+	DIP	6980	原装现货,可开13%税票	询价
深圳市昌和盛利电子有限公司	EDI88128CS45CB	AD	23+	DIP28	9827		询价
深圳市美思瑞电子科技有限公司	EDI88128CS55CB	EDI	22+	CDIP	12245	现货,原厂原装假一罚十!	询价
深圳市赛美科科技有限公司	EDI88128CS20CC	EDI		DIP	3350	一级代理原装正品假一罚十价格优势长期供货	询价
深圳市胜彬电子有限公司	EDI88128CS25TC	PHI	22+	DIP32	8000	原装正品支持实单	询价
深圳市赛特兴科技有限公司	EDI88128CS25LR	EDI	QQ咨询	LCC	126	全新原装研究所指定供货商	询价

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EDI88128C产品属性

EDI88128C供应商更多...

EDI88128C芯片相关品牌

EDI88128C规格书下载地址

EDI88128C参数引脚图相关

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EDU36311A/OEM/903

ECS-RTC-3225-5699C3 低功耗I2C RTC

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EDZVT2R3.0B：ROHM，SOD-52380K原装现货

EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H

EDF8164A3MA-CD-F-R有货的

DdatasheetPDF页码索引