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型号	功能描述	生产厂家企业	LOGO
EDI88128C	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128C	128KX8 MONOLITHIC SRAM, SMD 5962-89598	WEDC	WEDC
EDI88128CDXCB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXCM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXFM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXLM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXNM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXTM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZB	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZC	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZI	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CDXZM	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CS	128Kx8 Monolithic SRAM, SMD 5962-89598 The device has eight bi-directional input-output lines to provide simultaneous access to all bits in a word. An automatic power down feature permits the on-chip circuitry to enter a very low standby mode and be brought back into operation at a speed equal to the address access time. A Low Power	WEDC	WEDC
EDI88128CXCB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXCM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNC	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNI	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128CXNM	128Kx8 MONOLITHIC SRAM, SMD 5962-89598 The EDI88128C is a high speed, high performance, Monolithic CMOS Static RAM organized as 128Kx8. The device is also available as EDI88130C with an additional chip select line (CS2) which will automatically power down the device when proper logic levels are applied. The second chip select line (	WEDC	WEDC
EDI88128C100CB	128Kx8 MONOLITHIC SRAM, SMD 5962-89598	MICROCHIP 微芯科技	MICROCHIP
EDI88128CDXCB	128Kx8 Monolithic SRAM, SMD 5962-89598	MICROCHIP 微芯科技	MICROCHIP

EDI88128C产品属性

类型
描述
型号
EDI88128C
制造商
WEDC
制造商全称
White Electronic Designs Corporation
功能描述
128Kx8 MONOLITHIC SRAM, SMD 5962-89598

EDI88128C供应商更多...

更新时间：2026-3-2 14:30:00

IC供应商	芯片型号	品牌	批号	封装	库存	备注	价格
深圳市一线半导体有限公司	EDI88128C100CC		24+	DIP	2		询价
深圳市莱克讯科技有限公司	EDI88128CS45NB	IDT		CDIP	3647	莱克讯每片来自原厂!价格超越代理!只做进口原装!	询价
深圳市美思瑞电子科技有限公司	EDI88128CS55CB	EDI	22+	CDIP	12245	现货,原厂原装假一罚十!	询价
深圳市昊创电子有限公司	EDI88128C70CB	EDI		CDIP32	220	专营CAN铁帽CDIP	询价
深圳市达恩科技有限公司	EDI88128C100CB	EDI	24+	SBCDIP	1235	全部原装现货优势产品	询价
深圳市赛尔通科技有限公司	EDI88128CS25ZI		23+		2090		询价
深圳市创新迹电子有限公司	EDI88128CS25TB	EDI	22+	O-NEW DIP 军工	20000	公司只有原装品质保证	询价
深圳市英卓尔科技有限公司	EDI88128CS45CB	N/A	20+	QFP镀金陶瓷	3242	英卓尔科技,进口原装现货!	询价
深圳市胜彬电子有限公司	EDI88128CS25TC	PHI	22+	DIP32	8000	原装正品支持实单	询价
深圳市威雅利发展有限公司	EDI88128CA25CB	EDI	0710+	CDIP	47	一级代理,专注军工、汽车、医疗、工业、新能源、电力	询价

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EDI88128C产品属性

EDI88128C供应商更多...

EDI88128C芯片相关品牌

EDI88128C规格书下载地址

EDI88128C参数引脚图相关

EDI88128C数据表相关新闻

EDU36311A/OEM/903

ECS-RTC-3225-5699C3 低功耗I2C RTC

EDS102SZ

EDZVT2R3.0B：ROHM，SOD-52380K原装现货

EDC和EDS系列纽扣电池超级电容器EDC155Z5R5H

EDF8164A3MA-CD-F-R有货的

DdatasheetPDF页码索引