512M bits DDR2 SDRAM

文件：680.49 Kbytes Page：65 Pages

512M bits DDR2 SDRAM

文件：680.49 Kbytes Page：65 Pages

512M bits DDR2 SDRAM

文件：680.49 Kbytes Page：65 Pages

512M bits DDR2 SDRAM

文件：680.49 Kbytes Page：65 Pages

512M bits DDR2 SDRAM

512M bits DDR-II SDRAM

Description The EDE5104GB is a 512M bits DDR-II SDRAM organized as 33,554,432 words × 4 bits × 4 banks. The EDE5108GB is a 512M bits DDR-II SDRAM organized as 16,777,216 words × 8 bits × 4 banks. It packaged in 64-ball µBGA® package. Features • 1.8V power supply • Double-data-rate architectur

512M bits SDRAM

Elpida is Now Micron. EDS5104ABTA (128M words x 4 bits) EDS5108ABTA (64M words x 8 bits) EDS5116ABTA (32M words x 16 bits) The EDS5104AB is a 512M bits SDRAM organized as 33,554,432 words ×4 bits ×4 banks. The EDS5108AB is a 512M bits SDRAM organized as 16,777,216 word

FDDI, 100 Mbps ATM, and Fast Ethernet Transceivers in Low Cost 1x9 Package Style

Description The HFBR-5100 family of transceivers from Hewlett-Packard provide the system designer with products to implement a range of FDDI and ATM (Asynchronous Transfer Mode) designs at the 100 Mbps/125 MBd rate. Features • Full Compliance with the Optical Performance Requirements of the FDD

Radiation Hardened Low Noise Quad Operational Amplifier

Radiation Hardened, Low Noise Quad Operational Amplifiers The HS-5104ARH, HS-5104AEH are radiation hardened, monolithic quad operational amplifiers that provide highly reliable performance in harsh radiation environments. Excellent noise characteristics coupled with a unique array of dynamic spec

9 WATT REGULATED DC/DC CONVERTER

DESCRIPTION The PWR5104 and PWR5105 offer respectively ±12VDC and ±15VDC outputs of regulated 9W power driven from your +5V system bus. These units are designed for use in such diverse applications as process control, telecommunications, portable equipment, medical systems, airborne and shipboard