Plastic Film Capacitors

Features ● High safety (with safety function) ● Small size ● Excellent frequency characteristics ● Low loss ● Low hum sound noise ● Flame retardant epoxy resin coating ● 85 ℃ , 85 %RH , 500 V, 500 hours (630 V) ● RoHS compliant Recommended applications ● 250 V、630 V : High frequenc

Plastic Film Capacitors

Features ● High safety (with safety function) ● Small size ● Excellent frequency characteristics ● Low loss ● Low hum sound noise ● Flame retardant epoxy resin coating ● 85 ℃ , 85 %RH , 500 V, 500 hours (630 V) ● RoHS compliant Recommended applications ● 250 V、630 V : High frequenc

Plastic Film Capacitors

Features ● High safety (with safety function) ● Small size ● Excellent frequency characteristics ● Low loss ● Low hum sound noise ● Flame retardant epoxy resin coating ● 85 ℃ , 85 %RH , 500 V, 500 hours (630 V) ● RoHS compliant Recommended applications ● 250 V、630 V : High frequenc

Plastic Film Capacitors

Features ● High safety (with safety function) ● Small size ● Excellent frequency characteristics ● Low loss ● Low hum sound noise ● Flame retardant epoxy resin coating ● 85 ℃ , 85 %RH , 500 V, 500 hours (630 V) ● RoHS compliant Recommended applications ● 250 V、630 V : High frequenc

Metallized Polypropylene Film Capacitors

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薄膜电容器(电子机器用)

SELF-OSCILLATING HALF-BRIDGE DRIVER

Description The IR2155 is a high voltage, high speed, self-oscillating power MOSFET and IGBT driver with both high and low side referenced output channels. Proprietary HVIC and latch immune CMOS technologies enable ruggedized monolithic construction. The front end features a programmable oscill

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM appl

3V PROGRAMMABLE GAIN POWER AMPLIFIER

Product Description The RF2155 is a 3V medium power programmable gain amplifier IC. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in analog cellular phone transmitters or ISM appl

IC Voltage-Controlled Amplifiers

• Wide Dynamic Range: >116 dB • Wide Gain Range: >130 dB • Exponential (dB) Gain Control • Low Distortion: (0.008 @ 0 dB gain, 0.035 @15dB gain) • Wide Gain-Bandwidth: 6 MHz

3.3-V LDO AND DUAL SWITCH FOR USB BUS-POWERED HUB POWER MANAGEMENT

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