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型号 功能描述 生产厂家 企业 LOGO 操作
ECS6810

MOSFET

E-CMOS

飞虹高科

10-bit bus switch with precharged outputs and Schottky undershoot protection for live insertion

DESCRIPTION The CBT6810 provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bi-directional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to

PHILIPS

飞利浦

10-bit bus switch with precharged outputs and Schottky undershoot protection for live insertion

DESCRIPTION The CBT6810 provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bi-directional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to

PHILIPS

飞利浦

10-bit bus switch with precharged outputs and Schottky undershoot protection for live insertion

DESCRIPTION The CBT6810 provides ten bits of high-speed TTL-compatible bus switching. The low on-state resistance of the switch allows bi-directional connections to be made while adding near-zero propagation delay. The device also precharges the B port to a user-selectable bias voltage (BIASV) to

PHILIPS

飞利浦

10-Channel Serial-Input Latched Display Driver

General Description The HV6810 is a monolithic integrated circuit designed to drive a dot matrix or segmented vacuum fluorescent display (VFD). These devices feature a serial data output to cascade additional devices for large displays. Features ■ High output voltage 80V ■ High speed 5MHz @ 5V

SUTEX

Front-end and PLL synthesizers for car radios

文件:194.45 Kbytes Page:24 Pages

PHILIPS

飞利浦

ECS6810产品属性

  • 类型

    描述

  • Configure:

    Dual

  • MOSFET TyEC:

    N+N

  • V DS(V):

    60

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.8/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    44/54

  • GS =4.5V:

    50/63

  • Ciss(pF):

    835

  • Coss (pF):

    69

  • Crss(pF):

    40

  • Qg (nC)=10V:

    14

  • Qgs (nC):

    2.9

  • Qgd (nC):

    2.4

  • Rg W:

    1.7

  • EAS(mJ):

    11.25

  • I D(A) Tc=25 ℃:

    4.5

  • I D(A) Tc=100 ℃:

    2.85

  • EC(W)Tc=25 ℃:

    2.1

  • ESDDiode:

    X

  • Schokkty Diode:

    X

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