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型号 功能描述 生产厂家 企业 LOGO 操作
ECS4806

MOSFET

E-CMOS

飞虹高科

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

AOSMD

万国半导体

Dual N-Channel Enhancement Mode Field Effect Transistor

General Description The AO4806 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. They offer operation over a wide gate drive range from 1.8V to 12V. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitat

AOSMD

万国半导体

STS-48/STM-16 SONET/SDH Framer and ATM/POS Mapper

[AMCC} Features • Provides two SONET/SDH line interface modes of operation: single STS-48/STM-16 or quad STS-12/STM-4s. • Processes any valid combination of SONET/SDH STS-48c/AU-4-16c, STS-12c/AU-4-4c, STS-3c/AU-4, or STS-1/AU-3 tributaries within an STS-48/STM-16 or STS-12/STM-4. •

ETCList of Unclassifed Manufacturers

未分类制造商

Multiple Function Double Ended PWM Controller

Description The SC4806 is a double ended, high speed, highly integrated PWM controller optimized for applications requiring minimum space. The device is easily configurable for current mode or voltage mode operation and contains all the control circuitry required for isolated applications, where

SEMTECH

先之科

POWER ZENERS

POWER ZENERS 5 Watt, Industrial

MICROSEMI

美高森美

ECS4806产品属性

  • 类型

    描述

  • Configure:

    Dual

  • MOSFET TyEC:

    N+N

  • V DS(V):

    40

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.8/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    December 15

  • GS =4.5V:

    14/18

  • Ciss(pF):

    1220

  • Coss (pF):

    130

  • Crss(pF):

    55

  • Qg (nC)=4.5V:

    12.2

  • Qgs (nC):

    3.3

  • Qgd (nC):

    6.7

  • Rg W:

    2.2

  • EAS(mJ):

    76

  • I D(A) Tc=25 ℃:

    12

  • I D(A) Tc=100 ℃:

    7.5

  • EC(W)Tc=25 ℃:

    2.1

  • ESDDiode:

    X

  • Schokkty Diode:

    X

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