位置：首页 > IC中文资料 > ECQE6185JFB
| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-40A,RDS(ON)=19mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 |  |   | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-36A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=26mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-40A,RDS(ON)=19mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-220&TO-263package. RoHScompliant. RDS(ON)=25mW@VGS=-4.5V. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
P-ChannelEnhancementModeFieldEffectTransistor FEATURES -60V,-36A,RDS(ON)=20mW@VGS=-10V. SuperhighdensecelldesignforextremelylowRDS(ON). Highpowerandcurrenthandingcapability. TO-251&TO-252package. RDS(ON)=26mW@VGS=-4.5V. RoHScompliant. | CET-MOSCET-MOS Technology Corp. 華瑞華瑞功率電子股份有限公司 | | | |
High-SpeedUSBandAudioDPDTSwitch 文件：528.05 Kbytes Page：10 Pages | AOSMDAlpha & Omega Semiconductors 万国半导体美国万国半导体 |  | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
CET |
23+ |
TO-251 |
12300 |
全新原装真实库存含13点增值税票! |
|||
VBsemi |
2023+ |
TO252 |
700000 |
柒号芯城跟原厂的距离只有0.07公分 |
|||
CET原装 |
2021+ |
TO-251 |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
CET |
23+ |
TO-251 |
7300 |
专注配单,只做原装进口现货 |
|||
CET |
TO-251 |
68900 |
原包原标签100%进口原装常备现货! |
||||
VBsemi |
24+ |
TO252 |
18000 |
原装正品 有挂有货 假一赔十 |
|||
C |
23+ |
TO-252 |
10000 |
公司只做原装正品 |
|||
CET |
21+ |
TO-251 |
10 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
CET |
21+ |
TO-251 |
100 |
原装现货假一赔十 |
|||
C |
TO-252 |
22+ |
6000 |
十年配单,只做原装 |
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ECQE6185JFB规格书下载地址
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