位置:首页 > IC中文资料 > ECQE2106JFB

型号 功能描述 生产厂家 企业 LOGO 操作
ECQE2106JFB

Plastic Film Capacitors

Features ● Self-healing property ● Excellent electrical characteristics ● Flame retardant epoxy resin coating ● RoHS compliant Recommended applications ● General purpose usage ※Please contact us when applications are CDI , ignitor etc.

PANASONIC

松下

ECQE2106JFB

薄膜电容器(电子机器用)

PANASONIC

松下

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input imped

SUTEX

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

L-BAND PA DRIVER AMPLIFIER

DESCRIPTION The µPG2106TB and µPG2110TB are GaAs MMIC for PA driver amplifier with variable gain function which were developed for PDC (Personal Digital Cellular in Japan) and another L-band application. The device can operate with 3.0 V, having the high gain and low distortion. The µPG2106TB is

NEC

瑞萨

N-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedan

SUTEX

P-Channel Enhancement-Mode Vertical DMOS FETs

Advanced DMOS Technology These enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces devices with the power handling capabilities of bipolar transistors and with the high input impeda

SUTEX

ECQE2106JFB产品属性

  • 类型

    描述

  • 形状:

    树脂径向引线型

  • 直流或交流:

    DC

  • 额定电压 (V):

    250

  • 类别温度范围 (°C):

    -40 to 105 (85)

  • 静电容量 (µF):

    10

  • 静电容量容差 (%):

    -5 to 5

  • 电介质:

    MPET

  • 尺寸编号 (mm):

    引线类型

  • 引线间距 (mm):

    22.5

  • 包装形状:

    散装(塑料袋装)

更新时间:2026-5-24 15:01:00
IC供应商 芯片型号 品牌 批号 封装 库存 备注 价格
NIHON
22+
TO-252
20000
公司只有原装 品质保证
NIHON
最新
SOT-252
35689
原装进口现货库存专业工厂研究所配单供货
NIEC
24+
TO-252
8866
NIEC
20+
TO-252
15800
原装优势主营型号-可开原型号增税票
MAT
23+
2490
原装正品
23+
TO-252
56264
##公司主营品牌长期供应100%原装现货可含税提供技术
NIHON
04+
TO-252
4500
一级代理,专注军工、汽车、医疗、工业、新能源、电力
NIHON
2023+
TO-252
8800
正品渠道现货 终端可提供BOM表配单。
NIHON
TO-252
22+
6000
十年配单,只做原装
NIHON
23+
TO-252
4000
全新原装正品现货,支持订货

ECQE2106JFB数据表相关新闻