封装/外壳：径向 包装：散装 描述：CAP FILM 0.068UF 10% 400VDC RAD 电容器 薄膜电容器

薄膜电容

封装/外壳：径向 包装：卷带（TR） 描述：CAP FILM 0.068UF 10% 400VDC RAD 电容器 薄膜电容器

薄膜电容

薄膜电容

ZENER DIODE CHIPS

• ZENER DIODE CHIPS • ALL JUNCTIONS COMPLETELY PROTECTED WITH SILICON DIOXIDE • ELECTRICALLY EQUIVALENT TO 1N4678 THRU 1N4717 • 0.5 WATT CAPABILITY WITH PROPER HEAT SINKING • 50µA, LOW OPERATING CURRENT, ZENER DIODES • COMPATIBLE WITH ALL WIRE BONDING AND DIE ATTACH TECHNIQUES, WITH THE EXCEP

350mW LOW LEVEL ZENER DIODE 5 TOLERANCE

DESCRIPTION: The CENTRAL SEMICONDUCTOR CMPZ4678 Series silicon zener diode is a high quality voltage regulator designed for applications requiring an extremely low operating current and low leakage.

Silicon Epitaxial Planar Z-Diodes

Features ● Zener voltage specified at 50 μA ● Maximum delta VZ given from 10 μA to 100 μA ● Very high stability ● Low noise Applications     Voltage stabilization

Silicon NPN(PNP) epitaxial planer transistor

Silicon NPN epitaxial planer transistor (Tr1) Silicon PNP epitaxial planer transistor (Tr2) For high-frequency amplification/For general amplification ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.

NPN(PNP) epitaxial planer transistor

NPN epitaxial planer transistor (Tr1) PNP epitaxial planer transistor (Tr2) For high-frequency amplification (Tr1) For general amplification (Tr2) ■ Features ● Two elements incorporated into one package. ● Reduction of the mounting area and assembly cost by one half.