N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 4V drive • Composite type, facilitating high-density mounting • Halogen free compliance • Protection diode in

N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

双 N 沟道功率 MOSFET 30V，7A，24mΩ

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. • RoHS compliance\n• Environmental Consideration\n• Low On-Resistance\n• Improves Efficiency by Reducing Conduction Losses, Reduces Heat Dissipation\n• ESD Diode-Protected Gate\n• ESD Resistance\n• 4.0V drive\n• Composite type, Facilitating high-density mounting;

General-Purpose Switching Device Applications

文件：116.76 Kbytes Page：7 Pages

N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

General-Purpose Switching Device Applications

文件：116.76 Kbytes Page：7 Pages

封装/外壳：8-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 30V 7A ECH8 分立半导体产品 晶体管 - FET，MOSFET - 阵列

Voice Recorder (DRAM)

文件：857 Kbytes Page：15 Pages

DSC Motor Driver

文件：267.49 Kbytes Page：16 Pages

DSC Motor Driver

文件：267.49 Kbytes Page：16 Pages

13 - 15 GHz 4W Power Amplifier

文件：282.99 Kbytes Page：8 Pages