N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

N-Channel Silicon MOSFET General-Purpose Switching Device Applications

Features • 4V drive • Composite type, facilitating high-density mounting • Halogen free compliance • Protection diode in

General-Purpose Switching Device Applications

文件：116.76 Kbytes Page：7 Pages

双 N 沟道功率 MOSFET 30V，7A，24mΩ

N-Channel Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

Power MOSFET

This Power MOSFET is produced using ON Semiconductor’s trench technology, which is specifically designed to minimize gate charge and low on resistance. This device is suitable for applications with low gate charge driving or low on resistance requirements. Features • 4V drive • Composite type,

General-Purpose Switching Device Applications

文件：116.76 Kbytes Page：7 Pages

封装/外壳：8-SMD，扁平引线 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MOSFET 2N-CH 30V 7A ECH8 分立半导体产品 晶体管 - FET，MOSFET - 阵列

22 μA, RRIO, CMOS, 18 V Operational Amplifier

FEATURES Micropower at high voltage (18 V): 22 μA maximum Low input bias current: 20 pA maximum Gain bandwidth product: 240 kHz at AV =100 typical Unity-gain crossover: 240 kHz −3 dB closed-loop bandwidth: 310 kHz Slew rate: 80 V/ms Large signal voltage gain: 110 dB minimum Single-supply operat

LED LENS CAPS & HOLDERS

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AXL F AI4 U 1H

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LED LENS CAPS

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Heyco-Flex™ I Liquid Tight Conduit

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