| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
ECF12N50 | MOSFET | E-CMOS 飞虹高科 |   | |
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
500V N-Channel MOSFET General Description These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withs | FAIRCHILD 仙童半导体 | | ||
N-CHANNEL ENHANCEMENT MODE POWER MOSFET Features • Ultrafast rectifier in parallel with the body diode (MSAE type only) • Rugged polysilicon gate cell structure • Increased Unclamped Inductive Switching (UIS) capability • Hermetically sealed, surface mount power package • Low package inductance • Very low thermal resistance • Rev | MICROSEMI 美高森美 | | ||
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivale | ZETEX | | ||
DUAL 50V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR DESCRIPTION This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications. FEATURES • Extremely Low Equivale | ZETEX | |
ECF12N50产品属性
- 类型
描述
- Configuration：
Single
- MOSFETTyEC：
N
- V DS(V)：
500
- V GS(V)：
±30
- V th (V)：
3/4/5
- R DS(ON)(mΩ) max. at V GS =10V：
630/750
- Ciss(pF)：
1720
- Coss (pF)：
113
- Crss(pF)：
10
- Qg (nC)=10V：
29.6
- Qgs(nC)：
8.3
- Qgd (nC)：
9
- Rg W：
2.6
- EAS mJ)：
41
- I D(A) Tc=25 ℃：
12
- I D(A) Tc=100 ℃：
7.6
- EC(W)Tc=25 ℃：
39
- ESDDiode：
X
- Schokkty Diode：
X
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
NIEC |
2016+ |
TO252 |
6000 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
MURATA/村田 |
2450+ |
SMD |
9850 |
只做原厂原装正品现货或订货假一赔十! |
|||
NIEC |
2026+ |
TO252 |
676 |
原装正品 假一罚十! |
|||
MURATA/村田 |
25+ |
SMD |
880000 |
明嘉莱只做原装正品现货 |
|||
NIEC/英达 |
25+ |
TO-252 |
1093 |
全新原装正品支持含税 |
|||
EXIC |
23+ |
1400 |
|||||
KYOCERA |
16+ |
TO-252 |
50 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
NIEC |
23+ |
标准封装 |
5000 |
原厂授权一级代理 IGBT模块 可控硅 晶闸管 熔断器质保 |
|||
MICRON/美光 |
23+ |
NA |
20000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
N/A |
23+ |
NA |
50000 |
全新原装正品现货,支持订货 |
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ECF12N50规格书下载地址
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