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型号 功能描述 生产厂家 企业 LOGO 操作
ECD4906

MOSFET

E-CMOS

飞虹高科

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

CDI-DIODE

TEMPERATURE COMPENSATED ZENER REFERENCE DIODES

• TEMPERATURE COMPENSATED ZENER REFERENCE DIODES • LEADLESS PACKAGE FOR SURFACE MOUNT • 12.8 VOLT NOMINAL ZENER VOLTAGE ± 5 • LOW NOISE • METALLURGICALLY BONDED • DOUBLE PLUG CONSTRUCTION

CDI-DIODE

17-W, 2-Channel BTL AF High-Efficiency Power Amplifier for Car Audio Systems

The LA4906 is a BTL two-channel power amplifier for use in car audio systems. It uses a signal-following switching technique in the power supply for the amplifier output stage and a newly-developed nonlinear amplifier that features nonlinear characteristics in the signal system. These featu

SANYO

三洋

Surge Clamping, Transient Overvoltage Suppressor Unidirectional

Description: The NTE4900 series of silicon Transient Suppressors designed to protect voltage sensitive components from high energy voltage transients. Transient over voltage suppressor devices have become very important as a consequence of their high surge capability, extremely fast response time

NTE

PIN DIODE

DESCRIPTION The UM4000 and UM4900 series features high power PIN diodes with long carrier lifetimes and thick I-regions. They are especially suitable for use in low distortion switches and attenuators, in HF through S band frequencies. While both series are electrically equivalent, the UM4900 ser

MICROSEMI

美高森美

ECD4906产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    40

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.8/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    6.5/8.5

  • V GS =4.5V:

    9/12

  • Ciss(pF):

    1220

  • Coss (pF):

    130

  • Crss(pF):

    55

  • Qg (nC)=4.5V:

    12.2

  • Qgs(nC):

    3.3

  • Qgd(nC):

    6.7

  • Rg W:

    2.2

  • I D(A) Tc=25 ℃:

    50

  • I D(A) Tc=100 ℃:

    31.6

  • EC(W)Tc=25 ℃:

    54

  • ESDDiode:

    X

  • SchokktyDiode:

    X

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