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型号 功能描述 生产厂家 企业 LOGO 操作
ECD3910

MOSFET

E-CMOS

飞虹高科

丝印代码:4s;Power supply, standard voltage

Power supply, standard voltage

ROHM

罗姆

7.6mm 0.3 inch COMPACT NUMERIC FRAME DISPLAY

FEATURES • Bright Bold Segments • Common Anode/Cathode • Low Power Consumption • Low Current Capability • Neutral Segments • Grey Face • Epoxy Encapsulated Frame • High Performance • High Reliability APPLICATIONS • Appliances • Automotive • Instrumentation • Process Control

FAIRCHILD

仙童半导体

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件:141.83 Kbytes Page:10 Pages

IRF

Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)

文件:141.83 Kbytes Page:10 Pages

IRF

4-Bit DAC and Voltage Monitor

文件:222.85 Kbytes Page:6 Pages

TI

德州仪器

ECD3910产品属性

  • 类型

    描述

  • Configuration:

    Single

  • MOSFET TyEC:

    N

  • V DS(V):

    30

  • V GS(V):

    ±20

  • V th (V):

    1.2/1.8/2.5

  • R DS(ON)(mΩ) max. at V GS =10V:

    9.4/12

  • V GS =4.5V:

    13/18

  • Ciss(pF):

    620

  • Coss (pF):

    85

  • Crss(pF):

    60

  • Qg (nC)=4.5V:

    7.4

  • Qgs(nC):

    2.3

  • Qgd(nC):

    3

  • Rg W:

    2.8

  • EAS(mJ):

    13

  • I D(A) Tc=25 ℃:

    45

  • I D(A) Tc=100 ℃:

    28

  • EC(W)Tc=25 ℃:

    33

  • ESDDiode:

    X

  • SchokktyDiode:

    X

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