位置:首页 > IC中文资料第11563页 > EBS101

型号 功能描述 生产厂家 企业 LOGO 操作
EBS101

Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers

FEATURES ● Ideal for printed circuit board ● Lead tin plated copper ● Reliable low cost construction utilizing molded plastic technique results in inexpensive product

SECOS

喜可士

EBS101

1.0 Amp Silicon Bridge Rectifiers

SECOS

喜可士

1.0 Amp Silicon Bridge Rectifiers

文件:235.55 Kbytes Page:2 Pages

SECOS

喜可士

HIGH EFFICIENCY RECTIFIERS(1.0A,50-400V)

Switchmode Power Rectifiers HIGH EFFICIENCY RECTIFIERS 1.0 AMPERES 50 -- 400 VOLTS

MOSPEC

统懋

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS

DARLINGTON 8 AMPERE COMPLEMENTARY SILICON POWER TRANSISTORS 60– 80– 100 VOLTS 80 WATTS . . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain —hFE= 2500 (Typ) @ IC= 4.0 Adc • Collector–Emitter Sustaining Voltage — @ 30 mAdc

MOTOROLA

摩托罗拉

WIDE BAND AMPLIFIER CHIPS

DESCRIPTION PPG100P and PPG101P are GaAs integrated circuits designed as wide band amplifiers. Both devices are available in chip form. PPG100P is low noise amplifier from 50 MHz to 3 GHz and PPG101P is a medium power amplifier in the same frequency band. These devices are most suitable for the

NEC

瑞萨

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

Operational Amplifiers

文件:509.25 Kbytes Page:17 Pages

NSC

国半

EBS101产品属性

  • 类型

    描述

  • 型号

    EBS101

  • 制造商

    SECOS

  • 制造商全称

    SeCoS Halbleitertechnologie GmbH

  • 功能描述

    Voltage 50V ~ 1000V1.0 Amp Silicon Bridge Rectifiers

EBS101数据表相关新闻