Hitachi Microcomputer Development Environment System SH7750 E10A Emulator

Hitachi Microcomputer Development Environment System SH7750 E10A Emulator

H8S/2160B Series Expansion I/O Board

Overview The H8S/2160 series E6000 expansion I/O board (hereinafter referred to as the expansion I/O board) is an efficient software and hardware development support tool for application systems using Hitachis original microcomputers H8S/2160 series LPC (Low Pin Count) interface. The expansion I

SH7043 Series FP-144 User System Interface Cable

SH7043 Series FP-144 User System Interface Cable (HS7043ECH61H) for E6000 Emulator User’s Manual

AS-Interface编址电缆, Addressing cable

阀门插头的连接电缆 , VSTGH050MSS01,5B03VDAA041--S

SH7290 E10A Emulator

SH7290 E10A Emulator

文件：1.86736 Mbytes Page：252 Pages

包装：散装 描述：RELAY TIME DELAY 60HZ 1.5-15S 工业自动化与控制 延时继电器

包装：散装 描述：RELAY TIME DELAY 工业自动化与控制 延时继电器

Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp.

文件：2.98213 Mbytes Page：321 Pages

CATV amplifier modules

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a supply voltage of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability. APPLICATIONS • CATV systems ope

CATV amplifier module

DESCRIPTION Hybrid high dynamic range cascode amplifier module with darlington pre-stage dies operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliabili

CATV amplifier module

DESCRIPTION Hybrid amplifier module in a SOT115J package operating at a voltage supply of 24 V (DC). FEATURES • Excellent linearity • Extremely low noise • Silicon nitride passivation • Rugged construction • Gold metallization ensures excellent reliability • Mirrored image pinning of the B

4.0 AMPERE DARLINGTON POWER TRANSISTORS COMPLEMENTARY SILICON 40 WATT 50 WATT

. . . designed for general–purpose amplifier and low–speed switching applications. • High DC Current Gain — hFE = 2000 (Typ) @ IC = 2.0 Adc • Monolithic Construction with Built–in Base–Emitter Resistors to Limit Leakage Multiplication • Choice of Packages — MJE700 and MJE800 series

GaAlAs Semiconductor Laser

文件：40.25 Kbytes Page：2 Pages