Core2 Extreme Processor

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Polypropylene Semi-Rigid Notebooks

文件：34.94 Kbytes Page：1 Pages

E6704A EGPRS Lab Applications

文件：3.7132 Mbytes Page：6 Pages

Interactive Functional Test Software

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Mobile Test Application

文件：719.16 Kbytes Page：40 Pages

E6702G cdma2000/IS-95/AMPS

文件：533.63 Kbytes Page：15 Pages

N8993A GS-8800 Series (8960) Wireless

文件：1.7981 Mbytes Page：8 Pages

E6706G 1xEV-DO Lab Application

文件：466.49 Kbytes Page：16 Pages

RF Parametric and Functional Test

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Package in 8mm tape on 7 diameter reels.

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Package in 8mm tape on 7 diameter reels.

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Package in 8mm tape on 7 diameter reels.

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FAST RECOVERY DIODE

FAST RECOVERY DIODE FOR IGBT,IEGT,GCT APPLICATIONS SNUBBERLESS OPERATION LOW LOSSES SOFT RECOVERY Repetitive voltage up to 4500 V Mean forward current 1315 A Surge current 15 kA

COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS

Description The devices are manufactured in planar base island technology with monolithic Darlington configuration. Features ■ Good hFE linearity ■ High fT frequency ■ Monolithic Darlington configuration with integrated antiparallel collector-emitter diode Applications ■ Line

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

Multi TOPLED

Multi TOPLED® Features ●P-LCC-4 package ●color of package: white ●for use as optical indicator ●for backlighting, optical coupling into light pipes and lenses ●both chips can be controlled separately ●high signal efficiency possible by color change of the LED ●with approp

DUAL HIGH SIDE SWITCH WITH DUAL POWER MOS GATE DRIVER BRIDGE CONFIGURATION

Description The VND670SP is a monolithic device made using STMicroelectronics VIPower technology M0-3, intended for driving motors in full bridge configuration. The device integrates two 30 mW Power MOSFET in high-side configuration, and provides gate drive for two external Power MOSFET used as l