4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

SIC Schottky Rectifier

DESCRIPTION · Low Forward Voltage (VF) Drop with Positive Temperature Coefficient · Zero Reverse Recovery Current ForwardRecovery Voltage APPLICATIONS · Automotive Power Converstion · Boost Diodes in PFC · Bootstrap Diode

1200 V Discrete Silicon Carbide Schottky Diodes

封装/外壳：TO-252-2 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：2A 1200V SIC AUTOMOTIVE DIODE 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET