Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

SiC Schottky Diode

FEATURES · 1200V Schottky Rectifier · High-Frequency Operation · Temperature Independent Switching APPLICATIONS · Free Wheeling Diodes · AC/DC Converters · Switch Mode Power Supplies (SMPS)

4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m

1200 V Discrete Silicon Carbide Schottky Diodes

• 1.2kV Schottky Rectifier\n• High-Frequency Operation\n• Extremely Fast Switching\n• Positive Temperature Coefficient on V;

封装/外壳：TO-220-2 包装：管件 描述：DIODE SCHOTTKY 1.2KV 2A TO220-2 分立半导体产品 二极管 - 整流器 - 单

Silicon Carbide Schottky Diode

文件：732.57 Kbytes Page：6 Pages

Silicon Carbide Schottky Diode

Z-REC™ RECTIFIERS and ZERO-RECOVERY® RECTIFIERS SILICON CARBIDE Z-FET™ MOSFET

丝印代码：C4D02120；Silicon Carbide Schottky Diode Z-Rec® Rectifier

Features • 1.2kV Schottky Rectifier • Zero Reverse Recovery Current • High-Frequency Operation • Temperature-Independent Switching • Extremely Fast Switching • Positive Temperature Coefficient on VF Benefits • Replace Bipolar with Unipolar Rectifiers • Essentially No Switching Losses • H

4th Generation 1200 V, 2 A Silicon Carbide Schottky Diode

Description With the performance advantages of a Silicon Carbide (SiC) Schottky Barrier diode, power electronics systems can expect to meet higher efficiency standards than Si-based solutions, while also reaching higher frequencies and power densities. SiC diodes can be easily paralleled to m