N-CHANNEL 600V - 0.098ohm - 40A ISOTOP PowerMesh?줚I MOSFET

DESCRIPTION The PowerMESH™II is the evolution of the first generation of MESH OVERLAY™. The layout refinements introduced greatly improve the Ron*area figure of merit while keeping the device at the leading edge for what concerns swithing speed, gate charge and ruggedness. ■ TYPICAL RDS(on) = 0.

N-CHANNEL 50A - 600V TO-247 Hyper Fast PowerMESH??IGBT

DESCRIPTION Using the latest high voltage technology based on a patented strip layout, STMicroelectronics has designed an advanced family of IGBTs, the PowerMESH™ IGBTs, with outstanding performances. The suffix “V” identifies a family optimized for high frequency. ■ HIGH CURRENT CAPABI

N-CHANNEL 50A - 600V - TO-247 Very Fast PowerMESH IGBT

文件：279.63 Kbytes Page：10 Pages

N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT

文件：303.19 Kbytes Page：11 Pages

N-CHANNEL 50A - 600V - Max247 Very Fast PowerMESH IGBT

文件：303.19 Kbytes Page：11 Pages