包装：散装 描述：SCREW SHELL-BULK PACKED 电路保护 配件

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 7.3A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

Precision Potentiometer / Position Sensor

文件：417.4 Kbytes Page：3 Pages

GaAs FET Low Noise Amplifier

文件：117.63 Kbytes Page：1 Pages

50 Watt RF Load Up to 4 GHz With N Male Input Square Body Black Anodized Aluminum Heatsink

文件：428.16 Kbytes Page：4 Pages

Medium Power 50 Watts RF Load Up To 4 GHz With N Male

文件：203.28 Kbytes Page：3 Pages