Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES ■ 60V, 7.3A, RDS(ON) = 26mW @VGS = 10V. RDS(ON) = 35mW @VGS = 4.5V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Surface mount Package. ■ Lead free product is acquired.

Dual N-Channel Advanced Power MOSFET

Features  VDS= 60V, ID= 9 A RDS(ON)

N-Channel MOSFET uses advanced trench technology

文件：1.53941 Mbytes Page：5 Pages

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 7.4A, RDS(ON) = 23mW @VGS = 10V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. RoHS compliant. RDS(ON) = 31mW @VGS = 4.5V.

Dual N-Channel Enhancement Mode Field Effect Transistor

FEATURES 60V, 20A, RDS(ON) = 25mW @VGS = 10V. RDS(ON) = 32mW @VGS = 4.5V. Super High dense cell design for extremely low RDS(ON). High power and current handing capability. RoHS compliant.

Precision Potentiometer / Position Sensor

文件：417.4 Kbytes Page：3 Pages

1.0A Dual USB High-Side Power Switch

文件：222.44 Kbytes Page：9 Pages