 Features

 AEC-Q100 Grade 1 qualified

 6 V to 28 V (40 V abs. max) operating range

 Configurable source/sink current from 1 mA to

100 mA with 32 steps

 Adaptive MOSFET gate control

− Improved electromagnetic emission

− Reduced switching losses in PWM mode

 Two current sense amplifiers

− Configurable gain settings

− Supports high side, low side or inline

 Four PWM inputs

− High side and low side PWM

− Active free-wheeling

− Up to 100 kHz PWM frequency

 Supports two different power supplies for

half-bridges

 Control of reverse battery protection MOSFET

 Complete protections and diagnostics

− VDS monitor for every MOS

− Complete off-state diagnostic: open load,

short to battery, short to GND

− Overtemperature warning and shutdown

− Timeout watchdog with configurable period

settings (10, 50, 100, 200 ms)

− Supply undervoltage monitor

− Supply overvoltage monitor both in active

and passive mode

− Cross current protection

 Configurable low-side 1-4 brake with short

circuit detection both in sleep and normal mode

 Applications

 Automotive brushed DC motors

 Zone control unit

 Power seat modules

 Power lift gate

 Power sunroof

 Description

The DIA58104 are multi-channel NMOS gate drivers

which can drive up to 8 MOSFETs. The device can

be used as 4ch half-bridges for driving DC motor

control applications, and they can also be used as

independent high side or low side drivers for wider

automotive applications.

EMC performance can be well tuned by adjustable

slew rate with independence from dead-time and

turn on/off delays. The on-board measurement and

self-adaption of external MOSFET switching times

allows balancing of power dissipation and EMC

performance.

The DIA58104 integrates complete diagnostics and

protections, where brake protection greatly

enhances system reliability. This function allows the

motor to enter permanent brake mode to avoid

unintended movement of the motor. It can also

protect against supply overvoltage caused by motor

working in generator mode to protect the system.

The 24-bit SPI interface allows more flexible device

configuration and fault observability.

For A version, DIA58104 can separately configure

the Drain-source overvoltage threshold for the

high-side and low-side MOSFETs of a half bridge,

and it can also support the independent control

mode which is friendly for high-side switch

application.