Features and Benefits

PNP Transistor

• BVCEO > -12V

• IC = -4A Continuous Collector Current

• Low Saturation Voltage (-140mV max @ -1A)

• RSAT = 65mΩ for a low equivalent On-Resistance

• hFE characterized up to -10A for high current gain hold up

Schottky Diode

• BVR > 40V

• IFAV = 3A Average Peak Forward Current

• Low VF < 500mV (@1A) for reduced power loss

• Fast switching due to Schottky barrier

• Low profile 0.8mm high package for thin applications

• RθJA efficient, 40 lower than SOT26

• 6mm2 footprint, 50 smaller than TSOP6 and SOT26

• Lead-Free, RoHS Compliant (Note 1)

• Halogen and Antimony Free. “Green” Device (Note 2)

• Qualified to AEC-Q101 Standards for High Reliability

Applications

• DC – DC Converters

• Charging circuits

• Mobile phones

• Motor control

• Portable applications