SUMMARY

VCEO=20V; RSAT = 40mΩ; IC= 3.5A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex matrix structure combined with advanced assembly techniques to give extremely low on state losses. This makes it ideal for high efficiency, low voltage switching applications.

FEATURES

• Extremely Low Equivalent On Resistance

• Extremely Low Saturation Voltage

• hFE characterised up to 10A

• IC=3.5A Continuous Collector Current

• MSOP8 package

APPLICATIONS

• DC - DC Converters

• Power Management Functions

• Power switches

• Motor control