Description

This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and yet maintain superior switching performance, making it ideal for high efficiency power management applications.

Features and Benefits

• DIOFET Utilizes a Unique Patented Process to Monolithically

Integrate a MOSFET and a Schottky in a Single Die to Deliver:

• Low RDS(ON) – Minimize Conduction Losses

• Low VSD – Reducing the Losses due to Body Diode Conduction

• Low Qrr – Lower Qrr of the Integrated Schottky Reduces Body

Diode Switching Losses

• Low Gate Capacitance (Qg/Qgs) Ratio – Reduces Risk of

Shoot-Through or Cross Conduction Currents at High Frequencies

• Avalanche Rugged – IAR and EAR Rated

• Small Form Factor Thermally Efficient Package Enables Higher

Density End Products

• Occupies just 33 of the Board Area Occupied by SO-8 Enabling

Smaller End Product

• Lead-Free Finish; RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Applications

• DC-DC Converters

• Power Management Functions

• Analog Switch