Description

This Bipolar Junction Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.

Features

• BVCEO > 45V

• IC = 100mA High Collector Current

• PD = 435mW Power Dissipation

• 0.48mm2 Package Footprint, 16 Times Smaller than SOT23

• 0.4mm Height Package Minimizing Off-Board Profile

• Complementary PNP Type BC857BFA

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

• PPAP Capable (Note 4)