TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

文件：238.78 Kbytes Page：1 Pages

TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 5000 V Mean forward current 4175 A Surge current 45 kA

RECTIFIER DIODE

RECTIFIER DIODE Repetitive voltage up to 4500 V Mean forward current 4175 A Surge current 45 kA

MEDIUM POWER LOW VOLTAGE TRANSISTOR

MEDIUM POWER LOW VOLTAGE TRANSISTOR. DESCRIPTION The UTC 2SB772 is a medium power low voltage transistor, designed for audio power amplifier, DC-DC converter and voltage regulator. FEATURES * High current output up to 3A * Low saturation voltage * Complement to 2SD882

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

Description The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 Technology. Features ■ Suited as low voltage brid

QUAD SMART POWER SOLID STATE RELAY FOR COMPLETE H BRIDGE CONFIGURATIONS

Description The VN772K is a device formed by three monolithic chips housed in a standard SO-28 package: a double high side and two low side switches. Both the double high side and low side switches are made using STMicroelectronics VIPower™ M0-3 Technology. Features ■ Suited as low voltage brid