SWITCHING N-CHANNEL POWER MOS FET

FEATURES • Super low on-state resistance RDS(on) = 1.6 mΩ TYP. / 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • High Current Rating ID(DC) = ±160 A

MOS FIELD EFFECT TRANSISTOR

Description The NP160N04TUJ is N-channel MOS Field Effect Transistor designed for high current switching applications. Features • Low on-state resistance ⎯ RDS(on) = 2.0 mΩ MAX. (VGS = 10 V, ID = 80 A) • Low Ciss: Ciss = 6900 pF TYP. (VDS = 25 V, VGS = 0 V) • Designed for automotive appli

OptiMOS3 Power-Transistor

文件：234.66 Kbytes Page：9 Pages

SWITCHING N-CHANNEL POWER MOS FET

文件：297.12 Kbytes Page：8 Pages

Product Scout Automotive

文件：5.67799 Mbytes Page：6 Pages