丝印代码：X43；500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

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丝印代码：X43；500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

文件：108.89 Kbytes Page：3 Pages

丝印代码：X43；500mA/12V Low V Digital transistors

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Digital transistor(with built-in resistors)

500mA / 12V Low VCE (sat) Digital transistors (with built-in resistors)

文件：108.89 Kbytes Page：3 Pages

封装/外壳：SC-75，SOT-416 包装：卷带（TR） 描述：TRANS PREBIAS NPN 150MW EMT3 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

NPN SILICON POWER TRANSISTORS

NPN SILICON POWER TRANSISTORS ● Designed for Complementary Use with the BD544 Series ● 70 W at 25°C Case Temperature ● 8 A Continuous Collector Current ● 10 A Peak Collector Current ● Customer-Specified Selections Available

UHF power MOS transistor

DESCRIPTION Silicon N-channel enhancement mode vertical D-MOS transistor designed for communications transmitter applications in the UHF frequency range. The transistor is encapsulated in a 6-lead, SOT171 flange envelope, with a ceramic cap. All leads are isolated from the flange. The devices a