NPN SILICON BIAS RESISTOR TRANSISTOR

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolit

丝印代码：F21；DIGITAL TRANSISTOR

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kΩ 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit) . 3) Only the on/off conditions need to be set for operation, making the circuit design e

BIAS RESISTOR TRANSISTORS

SOT-23数字晶体管(SOT-23 Digital Transistors)

NPN SILICON BIAS RESISTOR TRANSISTOR

丝印代码：F21；Digital transistors (built-in resistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 1kΩ Features 1) Built-In Biasing Resistors, R1 = R2 = 1kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors（see inner circuit). 3) The bias resistors consist of thin-film r

丝印代码：F21；NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 1kΩ Features 1) Built-In Biasing Resistors, R1 = R2 = 1kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors（see inner circuit). 3) The bias resistors consist of thin-film r

NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 1kΩ Features 1) Built-In Biasing Resistors, R1 = R2 = 1kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors（see inner circuit). 3) The bias resistors consist of thin-film r

丝印代码：D113ES；Digital transistors (built-in resistors)

VCC 50V IC(MAX.) 500mA R1 1kΩ R2 1kΩ Features 1) Built-In Biasing Resistors, R1 = R2 = 1kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors（see inner circuit). 3) The bias resistors consist of thin-film r

丝印代码：F21；500mA/50V Digital transistor

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NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

文件：1.07632 Mbytes Page：8 Pages

500mA/50V Digital transistor

文件：1.07616 Mbytes Page：8 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：NPN 500MA/50V DIGITAL TRANSISTOR 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

丝印代码：F21；500mA / 50V Digital transistors (with built-in resistors)

文件：142.96 Kbytes Page：3 Pages

丝印代码：F21；500mA / 50V Digital transistors (with built-in resistors)

文件：74.11 Kbytes Page：3 Pages

丝印代码：F21；NPN 500mA 50V Digital Transistors

文件：385.58 Kbytes Page：7 Pages

500mA / 50V Digital transistors (with built-in resistors)

文件：142.96 Kbytes Page：3 Pages

500mA / 50V Digital transistors (with built-in resistors)

文件：74.11 Kbytes Page：3 Pages

NPN 500mA 50V Digital Transistors

文件：385.58 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR） 描述：DTD113EKFRA IS A TRANSISTOR WITH 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

丝印代码：D113ES；500mA / 50V Digital transistors (with built-in resistors)

文件：74.11 Kbytes Page：3 Pages

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages