500mA/50V 数字晶体管（电阻内置型晶体管）

DTD113EC是电阻内置型晶体管。偏置用电阻由薄膜电阻构成，由于采用完全绝缘，可将输入向负方向偏置。还有几乎不产生寄生效应的优点。 • 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors.(see equivalent circuit)\n• 2)The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage\n•  　of;

Digital Transistor

丝印代码：F21；500mA/50V Digital transistor

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500mA/50V 数字晶体管（电阻内置型晶体管）

DTD113ECHZG是适合逆变器、接口、驱动器用途的车载型高可靠性晶体管。 • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors. (see equivalent circuit)\n• The bias resistors consist of thin-film resistors with complete isolation to allow negative biasing of the input. They also have the advantage of almost ;

NPN 100mA 50V Digital Transistor (Bias Resistor Built-in Transistor)

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封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：500MA/50V DIGITAL TRANSISTOR (WI 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：NPN 500MA/50V DIGITAL TRANSISTOR 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

500mA/50V Digital transistor

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PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff

6-Pin DIP Optoisolators Darlington Output

6-Pin DIP Optoisolators Darlington Output The MTIL113 device consists of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington detector. This device is designed for use in applications requiring high collector output currents at lower input currents

Reference Diode

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Reference Diode

文件：126.55 Kbytes Page：4 Pages