丝印代码：TL；100mA / 50V Digital transistors

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative

丝印代码：24；NPN 100mA 50V Digital Transistors

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative

丝印代码：24；DTC114E series

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative

丝印代码：24；DTC114E series

Features 1) Built-In Biasing Resistors, R1 = R2 = 10kW. 2) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see inner circuit). 3) The bias resistors consist of thin-film resistors with complete isolation to allow negative

Digital transistor(with built-in resistors)

罗姆开发了数字晶体管的标准产品。 •标准的数字晶体管;

NPN 100mA 50V Digital Transistor

文件：2.36834 Mbytes Page：12 Pages

丝印代码：24；NPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)

文件：575.69 Kbytes Page：11 Pages

NPN 数字晶体管（支持AEC-Q101）

为支持现有客户而生产的产品。不对新设计出售此产品。 •标准的数字晶体管;

NPN 100mA 50V Digital Transistors

文件：1.51537 Mbytes Page：9 Pages

封装/外壳：SC-85 包装：卷带（TR） 描述：NPN DIGITAL TRANSISTOR (AEC-Q101 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

封装/外壳：SC-85 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PREBIAS NPN 200MW UMT3F 分立半导体产品 晶体管 - 双极（BJT）- 单，预偏置

CASE 463-01, STYLE 1 SOT-416/SC-90

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminat

CASE 463-01, STYLE 1 SOT-416/SC-90

Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital trans

PNP SILICON BIAS RESISTOR TRANSISTOR

This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The

Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its xternal resistor bias network. The BRT eliminate

0.25關m Sea of Gates and Customer Structured Arrays

DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff