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DTA114GE晶体管资料
DTA114GE别名:DTA114GE三极管、DTA114GE晶体管、DTA114GE晶体三极管
DTA114GE生产厂家:
DTA114GE制作材料:Si-P+R
DTA114GE性质:表面帖装型 (SMD)
DTA114GE封装形式:贴片封装
DTA114GE极限工作电压:50V
DTA114GE最大电流允许值:0.1A
DTA114GE最大工作频率:<1MHZ或未知
DTA114GE引脚数:3
DTA114GE最大耗散功率:0.3W
DTA114GE放大倍数:
DTA114GE图片代号:H-15
DTA114GEvtest:50
DTA114GEhtest:999900
- DTA114GEatest:0.1
DTA114GEwtest:0.3
DTA114GE代换 DTA114GE用什么型号代替:
| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DTA114GE | General Purpose Transistor General Purpose Transistor PNP Bipolar Junction Transistor with a 10 kΩ Base−Emitter Resistor | ONSEMI 安森美半导体 | ||
DTA114GE | 丝印代码:K14;Digital Transistors (Built-in Resistor) Features 1) The built-in bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of the input, and parasitic effects are almost completely eliminated. 2) Only the on / off conditions need to be set operation, making device design easy. 3) Higher mounting | ROHM 罗姆 | ||
DTA114GE | PNP Bipolar Junction Transistor with a 10 kΩ Base–Emitter Resistor | ETC 知名厂家 | ETC | |
DTA114GE | Digital PNP/NPN transistor (with resistors) | ROHM 罗姆 | ||
DTA114GE | 偏压电阻三极管 | AITSEMI 创瑞科技 | ||
PNP SILICON BIAS RESISTOR TRANSISTOR This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. The | ONSEMI 安森美半导体 | |||
Bias Resistor Transistor PNP Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its xternal resistor bias network. The BRT eliminate | MOTOROLA 摩托罗拉 | |||
CASE 463-01, STYLE 1 SOT-416/SC-90 The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital transistors are designed to replace a single device and its external resistor bias network. The BRT eliminat | MOTOROLA 摩托罗拉 | |||
CASE 463-01, STYLE 1 SOT-416/SC-90 Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base–emitter resistor. These digital trans | MOTOROLA 摩托罗拉 | |||
0.25關m Sea of Gates and Customer Structured Arrays DESCRIPTION Oki’s 0.25µm Application-Specific Integrated Circuit (ASIC) products are available in both Sea Of Gates (SOG) and Customer Structured Array (CSA) architectures. Both the SOG-based MG115P series and the CSA-based MG75P series use a five-layer metal process on 0.25µm drawn (0.18µm L-eff | OKIOki Electric Cable Co.,Ltd 冲电线日本冲电线株式会社 |
DTA114GE产品属性
- 类型
描述
- 型号
DTA114GE
- 制造商
ROHM
- 制造商全称
Rohm
- 功能描述
Digital transistors(built-in resistor)
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ROHM |
13+ |
SOT423 |
3000 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
|||
ROHM |
2016+ |
SOT23 |
2600 |
只做原装,假一罚十,公司可开17%增值税发票! |
|||
ROHM/罗姆 |
24+ |
SOT-23 |
8540 |
只做原装正品现货或订货假一赔十! |
|||
ROHM/罗姆 |
23+ |
SOT-23 |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
ROHM/罗姆 |
23+ |
SOT-23 |
66600 |
专业芯片配单原装正品假一罚十 |
|||
ROHM/罗姆 |
02+ |
SOT23 |
994 |
||||
ROHM/罗姆 |
2026+ |
SOT23 |
994 |
原装正品,假一罚十! |
|||
ROHM |
25+ |
SOT423 |
30000 |
代理全新原装现货,价格优势 |
|||
ROHM |
22+ |
SOT423 |
20000 |
公司只做原装 品质保障 |
|||
ROHM |
24+ |
SOT-23 |
9900 |
新进库存/原装 |
DTA114GE芯片相关品牌
DTA114GE规格书下载地址
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- DTA114GC,GK(A)
- DTA114G(A,F,L,S,V)
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DTA114GE数据表相关新闻
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2021-9-17DT74FCT162244ATPF-缓冲器/驱动器
描述: 该FCT162244T16位缓冲器/线路驱动器,是用于总线接口或信号缓冲适用于需要高速和低功耗。这些通过引脚器件有一个组织流程,简化和收缩包装电路板布局。所有输入的设计与改进的噪声容限的滞后。三态控制允许独立的4位,8位或联合16位运作。这些部分在哪里更换插头54/74ABT16244更高的速度,更低的噪音和低功耗水平的需要。该FCT162244T有平衡输出电流水平和电流限制电阻。这些具有低接地反弹,最小冲和控制输出下降时间,从而降低了外部串联电阻器的需要而终止还提供了对小于200pF负载非常高的速度运行。 特点: •
2013-3-5
DdatasheetPDF页码索引
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