6 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

6 W, RF Power GaN HEMT, Plastic

Description Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

FRED Pt® Gen 4 Doubler Ultrafast Diode, 400 A (INT-A-PAK Power Modules)

FEATURES • Gen 4 FRED Pt® dices technology • Ultrasoft reverse recovery characteristics • Low IRRM and reverse recovery charge • Very low forward voltage drop • 175 °C operating junction temperature • UL approved file E78996 for application with maximum case temperature up to 140 °C • Larg

4.00mm PITCH CONNECTOR

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4.00mm PITCH CONNECTOR

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