6 W, RF Power GaN HEMT, Plastic

Description Wolfspeed’s CGH40006S is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006S, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

6 W, RF Power GaN HEMT, Plastic

文件：2.058219 Mbytes Page：16 Pages

封装/外壳：6-VDFN 裸露焊盘 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：RF MOSFET HEMT 28V 6QFN 分立半导体产品 晶体管 - FET，MOSFET - 射频

6 W, RF Power GaN HEMT, Plastic

6 W, RF Power GaN HEMT, Plastic

包装：盒 描述：FET RF HEMT 28V 100MA 440203 开发板，套件，编程器 射频评估和开发套件，开发板

6 W, RF Power GaN HEMT, Plastic

文件：2.058219 Mbytes Page：16 Pages

6 W, RF Power GaN HEMT

Description Wolfspeed’s CGH40006P is an unmatched, gallium nitride (GaN) high electron mobility transistor (HEMT). The CGH40006P, operating from a 28 volt rail, offers a general purpose, broadband solution to a variety of RF and microwave applications. GaN HEMTs offer high efficiency, high ga

FRED Pt® Gen 4 Doubler Ultrafast Diode, 400 A (INT-A-PAK Power Modules)

FEATURES • Gen 4 FRED Pt® dices technology • Ultrasoft reverse recovery characteristics • Low IRRM and reverse recovery charge • Very low forward voltage drop • 175 °C operating junction temperature • UL approved file E78996 for application with maximum case temperature up to 140 °C • Larg

4.00mm PITCH CONNECTOR

文件：145.87 Kbytes Page：1 Pages

4.00mm PITCH CONNECTOR

文件：174.38 Kbytes Page：1 Pages