LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -40V • IC = -2A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -225mV Max @ IC = -1A • RCE(SAT) = 90mΩ at -0.5A for a Low Equivalent On-Resistance • 730mW Power Dissipation • Complimentary NPN Type: DSS4240T • Totally Lead-Free

PNP TRANSISTOR

LOW VCE(SAT) PNP SURFACE MOUNT TRANSISTOR

Features • BVCEO > -40V • IC = -2A High Continuous Collector Current • ICM = -3A Peak Pulse Current • Low Saturation Voltage -225mV Max @ IC = -1A • RCE(SAT) = 90mΩ at -0.5A for a Low Equivalent On-Resistance • 730mW Power Dissipation • Complimentary NPN Type: DSS4240T • Totally Lead-Free

40V PNP LOW SATURATION TRANSISTOR IN SOT23

This bipolar junction transistor (BJT) is designed to meet the stringent requirement of Automotive Applications.\n\n •BVCEO > -40V\n•ICM = -3A Peak Pulse Current\n•RCE(sat) = 90mΩ at 0.5A for a Low Equivalent On-Resistance\n•Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)\n•The DSS5240TQ is suitable for automotive applications requiring specific change control; this part is AEC-Q101qualified, PPAP capable, ;

40V PNP LOW SATURATION TRANSISTOR IN SOT23

文件：243.23 Kbytes Page：7 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

封装/外壳：TO-236-3，SC-59，SOT-23-3 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：TRANS PNP 40V 2A SOT23-3 分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini power type package (2-pin) • Allowing automatic mounting with the emboss taping • Sharp rising performance

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 410 mWatts FEATURES • Planar Die construction • 410mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

VOLTAGE 2.4 to 51 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Zener Voltages from 2.4V~51V • Ideally Suited for Automated Assembly Processes • In compliance with EU RoHS 2002/95/EC directives

SURFACE MOUNT SILICON ZENER DIODES

SURFACE MOUNT SILICON ZENER DIODES VOLTAGE 2.4 to 75 Volts POWER 200 mWatts FEATURES • Planar Die construction • 200mW Power Dissipation • Ideally Suited for Automated Assembly Processes • Pb free product : 99 Sn above can meet RoHS environment substance diective request

50 Watt Zener Diodes 짹5 Tolerance

Features: ● Zener Voltage 3.9 to 200V ● Low Zener Impedance ● Highly Reliable and Rugged ● Also Available in Reverse Polarity (NTE5240AK thru NTE5296AK)