封装/外壳：TO-263-3，D²Pak（2 引线 + 接片），TO-263AB 包装：散装 描述：DIODE GEN PURP 600V 30A TO263 分立半导体产品 二极管 - 整流器 - 单

HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low cathode to tab capacitance (

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

HiPerFRED Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche vol

Ultra fast Rectifier

FEATURES • With TO-220F packaging • High performance fast recovery diode • Low loss and soft recovery • Common cathode • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching power supply • Power switching circuits • General purpose

30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

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30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

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