HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

Features • Silicon chip on Direct-Copper-Bond substrate - High power dissipation - Isolated mounting surface - 2500V electrical isolation • Low cathode to tab capacitance (

HiPerFRED Epitaxial Diode ISOPLUS220 Electrically Isolated Back Surface

Ultra fast Rectifier

FEATURES • With TO-220F packaging • High performance fast recovery diode • Low loss and soft recovery • Common cathode • Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS • Switching power supply • Power switching circuits • General purpose

High Performance Fast Recovery Diode Low Loss and Soft Recovery Common Cathode

HiPerFRED Low Loss and Soft Recovery High Performance Fast Recovery Diode Common Cathode Features / Advantages: ● Planar passivated chips ● Very low leakage current ● Very short recovery time ● Improved thermal behaviour ● Very low Irm-values ● Very soft recovery behaviour ● Avalanche vol

30.0 Ampere Insulated Dual Common Anode Ultra Fast Recovery Rectifiers

文件：274.33 Kbytes Page：2 Pages

30.0 Ampere Insulated Dual Common Cathode Ultra Fast Recovery Rectifiers

文件：280.14 Kbytes Page：2 Pages