SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A

DESCRIPTION The DS32W~DS3 20W are available in SOD 123FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, h igh frequency inv

SCHOTTKY BARRIER RECTIFIER REVERSE VOLTAGE 20 TO 200V FORWARD CURRENT 3A

DESCRIPTION The DS32W~DS3 20W are available in SOD 123FL p a ckage FEATURES  M etal silicon junction, majority carrier conduction  For surface mounted applications  Low power loss, high efficiency  High forward surge current capability  For use in low voltage, h igh frequency inv

丝印代码：K312；Surface Mount Schottky Barrier Rectifier

Features Metal silicon junction, majority carrier conduction For surface mounted applications Low power loss, high efficiency High forward surge current capability For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications

Surface MountSchottky Barrier Rectifier

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丝印代码：S312；Surface Mount Schottky Barrier Rectifier

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肖特基整流桥

肖特基二极管

肖特基二极管

丝印代码：S312；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：311.14 Kbytes Page：5 Pages

丝印代码：S312；SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：311.44 Kbytes Page：5 Pages

Surface Mount Schottky Barrier Rectifier

文件：128.75 Kbytes Page：3 Pages

SURFACE MOUNT SCHOTTKY BARRIER RECTIFIER

文件：311.44 Kbytes Page：5 Pages

Sequencing Hotswap Controllers

General Description The HV302 and HV312 Hotswap Controllers perform current limiting, circuit breaker protection, over and under voltage detection power management functions during insertion of cards or modules into live backplanes and connectors. Theymaybe used in systems where active contro

N-Channel Silicon Junction Field Effect Transistor

Description: The NTE312 is a field effect transistor designed for VHF amplifier and mixer applications. The NTE312 comes in a TO–92 package. Features: • High Power Gain: 10dB Min at 400MHz • High Transconductance: 4000 µmho Min at 400MHz • Low Crss: 1pF Max • High (Yfs) / Ciss

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

TURBOSWITCHTM ULTRA-FAST HIGH VOLTAGE DIODE

DESCRIPTION TURBOSWITCH 1200V drastically cuts losses in all high voltage operationswhich require extremely fast, soft and noise-free power diodes. Due to their optimized switching performances they also highly decrease power losses in any associated switching IGBT or MOSFET in all ”freewheel mo

Operational Amplifiers

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