3.3V Single-Piece 256kb Nonvolatile SRAM with Clock

文件：549.97 Kbytes Page：18 Pages

3.3V Single-Piece 256kb Nonvolatile SRAM with Clock

文件：282.19 Kbytes Page：18 Pages

3.3V、单芯片、256kb非易失SRAM，带有时钟

封装/外壳：256-BGA 包装：托盘 描述：IC NVSRAM 256KBIT PAR 256BGA 集成电路（IC） 存储器

3.3V Single-Piece 256kb Nonvolatile SRAM with Clock

文件：549.97 Kbytes Page：18 Pages

3.3V Single-Piece 256kb Nonvolatile SRAM with Clock

文件：282.19 Kbytes Page：18 Pages

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

Silicon planar type

Silicon planar type For stabilization of power supply ■ Features • Mini type package (3-pin) • Allowing to achieve a high-density set • Sharp rising performance • Wide voltage range: VZ = 2.0 V to 36 V

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh

SWITCHMODE??Power Rectifier

SWITCHMODE Power Rectifier Using the Schottky Barrier principle with a proprietary barrier metal. These state–of–the–art devices have the following features: • Guardring for Stress Protection • Maximum Die Size • 150°C Operating Junction Temperature • Short Heat Sink Tab Manufactured – Not Sh