1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k非易失SRAM

DS1245 1024k非易失(NV) SRAM为1,048,576位、完全静态的非易失SRAM，按照8位、131,072字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1245器件可以用来替代现有的128k x 8静态RAM，符合通用的单字节宽、32引脚DIP标准。PowerCap模块封装的DS1245器件可以直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SRAM模块。该器件没有写次数限制，可直接与微处理器接口、不需要额 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代128k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS\n• 70ns的读写存取时间 \n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1245Y) \n• 可选择±5% VCC工作范围(DS1245AB)\n• 可选的工业级温度范围为-40°C至+85°C，指定为IND\n• JEDEC标准的32引脚DIP封装 \n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerC;

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器

封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器

SEMICONDUCTORS

文件：2.43533 Mbytes Page：31 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

1024k Nonvolatile SRAM

文件：229.51 Kbytes Page：10 Pages

3.3V 1024k Nonvolatile SRAM

DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

3.3V 1024k Nonvolatile SRAM

DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a

1024k Nonvolatile SRAM

DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc

AM Electronic Tuner

Overview LA1245 is a high performance IC to be used as an AM electronic tuner. It provides an automatic search-stop signal, local oscillator buffer-output, and the low level local oscillation, as well as providing all other functions required of an AM tuner. Moreover, the stable local oscillati

Active-Low Input Fluorescent Display Tube Driver?

Overview The LB1245 has been designed for interfacing low-level digital devices to fluorescent display tubes. Its 8-circuit independent Darlington output stage is used for digit and segment drivers. Equivalent pull-down resistors are built in ; externally connected resistors to prevent ghosts are