位置：首页 > IC中文资料第9815页 > DS1245
DS1245价格
参考价格：￥140.2440
型号：DS1245AB-100+ 品牌：Maxim 备注：这里有DS1245多少钱，2025年最近7天走势，今日出价，今日竞价，DS1245批发/采购报价，DS1245行情走势销售排行榜，DS1245报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1245 | 3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas |   | |
DS1245 | 1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | |
DS1245 | 3.3V 1024k Nonvolatile SRAM | AD 亚德诺 | | |
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | Dallas | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Dallas | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024K Nonvolatile SRAM 文件：322.18 Kbytes Page：9 Pages | Maxim 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP | | ||
3.3V 1024k Nonvolatile SRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP | | ||
3.3V 1024k Nonvolatile SRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | Maxim 美信 | | ||
3.3V、1024k非易失SRAM | AD 亚德诺 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | Maxim 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | Maxim 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | Maxim 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Maxim 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | Dallas | |
DS1245产品属性
- 类型
描述
- 型号
DS1245
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
3.3V 1024k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
DALLAS原装正品专卖价 |
NEW |
32-DIP |
16564 |
全新原装正品,价格优势,长期供应,量大可订 |
|||
DALLAS |
23+ |
DIP |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
DALLAS |
24+ |
DIP32 |
8950 |
BOM配单专家,发货快,价格低 |
|||
DALLAS |
2447 |
DIP |
100500 |
一级代理专营品牌!原装正品,优势现货,长期排单到货 |
|||
DALLAS |
23+ |
DIP |
50000 |
全新原装正品现货,支持订货 |
|||
DS |
23+ |
35651 |
##公司主营品牌长期供应100%原装现货可含税提供技术 |
||||
DALLAS |
24+ |
DIP |
388 |
||||
Maxim |
22+ |
32EDIP |
9000 |
原厂渠道,现货配单 |
|||
DALLAS |
24+ |
DIP-32 |
66500 |
郑重承诺只做原装进口现货 |
|||
DALLAS |
20+ |
DIP |
26580 |
全新原装长期特价销售 |
DS1245规格书下载地址
DS1245参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1265Y
- DS1265W
- DS1260
- DS126
- DS1259
- DS1258Y
- DS1258W
- DS1254
- DS1251Y
- DS1251P
- DS1251
- DS1250Y
- DS1250W
- DS125
- DS1249Y
- DS1249W
- DS1248P
- DS1248
- DS1245YP-70+
- DS1245YP-100+
- DS1245Y-85+
- DS1245Y-70IND+
- DS1245Y-70+
- DS1245Y-120IND+
- DS1245Y-120+
- DS1245Y-100+
- DS1245Y
- DS1245WP-150+
- DS1245WP-100+
- DS1245W-150+
- DS1245W-100IND+
- DS1245W-100+
- DS1245W
- DS1245ABP-70IND+
- DS1245ABP-70+
- DS1245AB-70IND+
- DS1245AB-70+
- DS1245AB-120IND+
- DS1245AB-120+
- DS1245AB-100+
- DS1244YP-70+
- DS1244Y-70+
- DS1244Y
- DS1244W-120IND+
- DS1244W-120+
- DS1244P
- DS1244
- DS1243Y-120+
- DS1243Y
- DS1243
- DS1239
- DS1238S
- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
- DS1233Z-5+T&R
- DS1233Z-5+
- DS1233Z-15+
- DS1233Z-10+T&R
- DS1233Z-10+
- DS1233MS-55+
- DS1233MS-5+
- DS1233MS-3+
- DS1233M-55+
- DS1233M-5+
- DS1233M
- DS1233DZ-5+T&R
- DS1233DZ-5+
- DS1233DZ-15+T&R
- DS1233DZ-15+
- DS1233DZ-10+T&R
- DS1233D
- DS1233A
- DS1233
- DS1232S
- DS1232N
- DS1232
- DS1231S
DS1245数据表相关新闻
DS1233AZ-15 SOT-223-3 电源管理 IC 监控电路 全新原装
DS1233AZ-15 SOT-223-3 电源管理 IC 监控电路 全新原装
2024-5-23DS1233AZ-10+
DS1233AZ-10+
2022-9-28DS1232LP+，美信珠海代理商，MAXIM珠海代理商
DS1232LP+，美信珠海代理商，MAXIM珠海代理商
2020-10-31DS125BR820NJYT 接口-信号缓冲器、中继器
DS125BR820NJYT 接口-信号缓冲器、中继器
2020-10-28DS1259-电池管理芯片
特点 促进不间断电源 只有当主VCC是不可用的使用电池 低正向压降 电源故障信号中断的处理器，或写保护内存 功耗小于100 nA的电池电流 低电量警告信号 电池可电断开后命令 当VCC应用，电池会自动重新连接 配合DS1212非易失控制器×16片直接与备份16的RAM 可选的16引脚SOIC表面贴装封装 DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
2013-1-1DS1267-双数字电位器芯片
DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。 该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
DdatasheetPDF页码索引
- P1
- P2
- P3
- P4
- P5
- P6
- P7
- P8
- P9
- P10
- P11
- P12
- P13
- P14
- P15
- P16
- P17
- P18
- P19
- P20
- P21
- P22
- P23
- P24
- P25
- P26
- P27
- P28
- P29
- P30
- P31
- P32
- P33
- P34
- P35
- P36
- P37
- P38
- P39
- P40
- P41
- P42
- P43
- P44
- P45
- P46
- P47
- P48
- P49
- P50
- P51
- P52
- P53
- P54
- P55
- P56
- P57
- P58
- P59
- P60
- P61
- P62
- P63
- P64
- P65
- P66
- P67
- P68
- P69
- P70
- P71
- P72
- P73
- P74
- P75
- P76
- P77
- P78
- P79
- P80
- P81
- P82
- P83
- P84
- P85
- P86
- P87
- P88
- P89
- P90
- P91
- P92
- P93
- P94
- P95
- P96
- P97
- P98
- P99
- P100
- P101
- P102
- P103
- P104
- P105
