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DS1245价格
参考价格：￥140.2440
型号：DS1245AB-100+ 品牌：Maxim 备注：这里有DS1245多少钱，2024年最近7天走势，今日出价，今日竞价，DS1245批发/采购报价，DS1245行情走势销售排行榜，DS1245报价。| 型号 | 功能描述 | 生产厂家&企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1245 | 3.3V1024kNonvolatileSRAM DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha | Dallas Dallas Semiconductor Corp. |  |   |
DS1245 | 1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
3.3V1024kNonvolatileSRAM DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha | Dallas Dallas Semiconductor Corp. | | | |
3.3V1024kNonvolatileSRAM DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha | Dallas Dallas Semiconductor Corp. | | | |
3.3V1024kNonvolatileSRAM DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha | Dallas Dallas Semiconductor Corp. | | | |
3.3V1024kNonvolatileSRAM DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha | Dallas Dallas Semiconductor Corp. | | | |
3.3V1024kNonvolatileSRAM DESCRIPTION TheDS1245W3.3V1024kNonvolatileSRAMisa1,048,576-bit,fullystatic,nonvolatileSRAMorganizedas131,072wordsby8bits.EachNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensucha | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024KNonvolatileSRAM ComingSoon. Ifyouhavesomeinformationonrelatedparts,pleaseshareusefulinformationbyaddinglinksbelow. | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM DESCRIPTION TheDS12451024kNonvolatileSRAMsare1,048,576-bit,fullystatic,nonvolatileSRAMsorganizedas131,072wordsby8bits.EachcompleteNVSRAMhasaself-containedlithiumenergysourceandcontrolcircuitrywhichconstantlymonitorsVCCforanout-of-tolerancecondition.Whensuc | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 |  | | |
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 |  | | |
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | ADAnalog Devices 亚德诺亚德诺半导体技术有限公司 | | | |
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 |  | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024KNonvolatileSRAM 文件：322.18 Kbytes Page：9 Pages | MaximMaximIntegrated 美信半导体 | | | |
3.3V1024kNonvolatileSRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. |  | | |
3.3V1024kNonvolatileSRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | | | |
3.3V1024kNonvolatileSRAM 文件：229.01 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
3.3V1024kNonvolatileSRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP ARTSCHIP ELECTRONICS CO.,LMITED. | | | |
3.3V1024kNonvolatileSRAM 文件：229.01 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
3.3V1024kNonvolatileSRAM 文件：229.01 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
3.3V1024kNonvolatileSRAM 文件：229.01 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
3.3V1024kNonvolatileSRAM 文件：229.01 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | MaximMaximIntegrated 美信半导体 | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | Dallas Dallas Semiconductor Corp. | | | |
1024kNonvolatileSRAM 文件：229.51 Kbytes Page：10 Pages | Dallas Dallas Semiconductor Corp. | | | |
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | etc2List of Unclassifed Manufacturers etc2未分类制造商 | | |
DS1245产品属性
- 类型
描述
- 型号
DS1245
- 制造商
DALLAS
- 制造商全称
Dallas Semiconductor
- 功能描述
3.3V 1024k Nonvolatile SRAM
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Maxim |
21+ |
32EDIP |
13880 |
公司只售原装,支持实单 |
|||
MAXIM |
23+ |
MOD-32 |
6000 |
全新原装现货、诚信经营! |
|||
MAXIM/美信 |
24+ |
NA |
860000 |
明嘉莱只做原装正品现货 |
|||
23+ |
DIP16P |
18000 |
|||||
DALLAS特 |
2020+ |
DIP |
130 |
百分百原装正品 真实公司现货库存 本公司只做原装 可 |
|||
Maxim(美信) |
23+ |
标准封装 |
22557 |
原厂渠道供应,大量现货,原型号开票。 |
|||
DS |
22+ |
5000 |
|||||
DALLAS |
16+ |
DIP |
11 |
原装现货假一罚十 |
|||
MAXIM/美信 |
23+ |
DIP32 |
11360 |
ADI优势主营型号-原装正品 |
|||
DALLAS |
17+ |
PCB |
9800 |
只做全新进口原装,现货库存 |
DS1245芯片相关品牌
DS1245规格书下载地址
DS1245参数引脚图相关
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DS1245数据表相关新闻
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进口代理
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2020-10-28DS1259-电池管理芯片
特点促进不间断电源只有当主VCC是不可用的使用电池低正向压降电源故障信号中断的处理器，或写保护内存功耗小于100nA的电池电流低电量警告信号电池可电断开后命令当VCC应用，电池会自动重新连接配合DS1212非易失控制器×16片直接与备份16的RAM可选的16引脚SOIC表面贴装封装DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
2013-1-1DS1267-双数字电位器芯片
DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
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