DS1245价格
参考价格：￥140.2440
型号：DS1245AB-100+ 品牌：Maxim 备注：这里有DS1245多少钱，2026年最近7天走势，今日出价，今日竞价，DS1245批发/采购报价，DS1245行情走势销售排行榜，DS1245报价。| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
DS1245 | 3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | DALLAS |   | |
DS1245 | 1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | |
DS1245 | 3.3V 1024k Nonvolatile SRAM | AD 亚德诺 | | |
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | DALLAS | | ||
3.3V、1024k非易失SRAM DS1245W 3.3V 1024k非易失SRAM为1,048,576位、全静态非易失SRAM，按照8位、131,072字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1245W器件可以用来替代现有的128k x 8静态RAM，符合通用的单字节宽、32引脚DIP标准。PowerCap模块封装的DS1245W器件可直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SRAM模块。该器件没有写次数限制，可直接与微处理器接口、不需要额 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代128k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS \n• 100ns的读写存取时间\n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• 可选的-40°C至+85°C工业级温度范围，指定为IND\n• JEDEC标准的32引脚DIP封装\n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerCap提供备份锂电池 \n• 所有非易失SRAM器件提供标准引脚 \n• 分离的PowerCap用常规的螺丝起子便可方便拆卸; | AD 亚德诺 | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | DALLAS | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | DALLAS | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | DALLAS | | ||
3.3V 1024k Nonvolatile SRAM DESCRIPTION The DS1245W 3.3V 1024k Nonvolatile SRAM is a 1,048,576-bit, fully static, nonvolatile SRAM organized as 131,072 words by 8 bits. Each NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When such a | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k非易失SRAM DS1245 1024k非易失(NV) SRAM为1,048,576位、完全静态的非易失SRAM，按照8位、131,072字排列。每个NV SRAM均自带锂电池及控制电路，控制电路连续监视VCC是否超出容差范围，一旦超出容差范围，锂电池便自动切换至供电状态、写保护将无条件使能、防止数据被破坏。DIP封装的DS1245器件可以用来替代现有的128k x 8静态RAM，符合通用的单字节宽、32引脚DIP标准。PowerCap模块封装的DS1245器件可以直接表面贴安装、通常与DS9034PC PowerCap配合构成一个完整的非易失SRAM模块。该器件没有写次数限制，可直接与微处理器接口、不需要额 • 在没有外部电源的情况下最少可以保存数据10年\n• 掉电期间数据被自动保护\n• 替代128k x 8易失静态RAM、EEPROM或闪存\n• 没有写次数限制\n• 低功耗CMOS\n• 70ns的读写存取时间 \n• 第一次上电前，锂电池与电路断开、维持保鲜状态\n• ±10% VCC工作范围(DS1245Y) \n• 可选择±5% VCC工作范围(DS1245AB)\n• 可选的工业级温度范围为-40°C至+85°C，指定为IND\n• JEDEC标准的32引脚DIP封装 \n• PowerCap模块(PCM)封装\n• 表面贴装模块\n• 可更换的即时安装PowerC; | AD 亚德诺 | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024K Nonvolatile SRAM Coming Soon. If you have some information on related parts, please share useful information by adding links below. | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM DESCRIPTION The DS1245 1024k Nonvolatile SRAMs are1,048,576-bit, fully static, nonvolatile SRAMs organized as 131,072 words by 8 bits. Each complete NV SRAM has a self-contained lithium energy source and control circuitry which constantly monitors VCC for an out-of-tolerance condition. When suc | DALLAS | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | DALLAS | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
封装/外壳：32-DIP 模块（0.600"，15.24mm） 包装：管件 描述：IC NVSRAM 1MBIT PARALLEL 32EDIP 集成电路（IC） 存储器 | AD 亚德诺 | | ||
SEMICONDUCTORS 文件：2.43533 Mbytes Page：31 Pages | ETCList of Unclassifed Manufacturers 未分类制造商 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024K Nonvolatile SRAM 文件：322.18 Kbytes Page：9 Pages | MAXIM 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP | | ||
3.3V 1024k Nonvolatile SRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP | | ||
3.3V 1024k Nonvolatile SRAM 文件：401.26 Kbytes Page：11 Pages | ARTSCHIP | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | MAXIM 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | MAXIM 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | MAXIM 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | MAXIM 美信 | | ||
3.3V 1024k Nonvolatile SRAM 文件：229.01 Kbytes Page：10 Pages | MAXIM 美信 | | ||
1024k Nonvolatile SRAM 文件：229.51 Kbytes Page：10 Pages | MAXIM 美信 | |
DS1245产品属性
- 类型
描述
- Memory Type：
NV SRAM
- Memory Size：
128K x 8
- Bus Type：
Parallel
- Features：
DIP with Internal Battery
- VSUPPLY (min)(V)：
4.75
- VSUPPLY (max)(V)：
5.25
- RoHS Available：
See Data Sheet
- Oper. Temp.(°C)：
-40 to +85
- Package/ Pins：
MOD/32
- Smallest Available Pckg. (max w/pins)(mm2)：
596.9
- Budgetary Price (See Notes)：
$19.98 @1k
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
ADI(亚德诺) |
25+ |
N/A |
18798 |
原装正品现货,原厂订货,可支持含税原型号开票。 |
|||
DALLAS |
24+ |
DIP-32 |
66500 |
郑重承诺只做原装进口现货 |
|||
DALLAS |
05+ |
PwrCap |
104 |
只售原装正品 |
|||
MAXIM |
23+ |
32EDIP |
2890 |
长期有货,进口原装,绝无虚假。 |
|||
Maxim(美信) |
24+ |
标准封装 |
22557 |
原厂渠道供应,大量现货,原型号开票。 |
|||
MAXIM |
25+ |
MOD-32 |
6000 |
全新原装现货、诚信经营! |
|||
ADI/亚德诺 |
25+ |
DIP-32 |
12496 |
ADI/亚德诺原装正品DS1245Y-70IND即刻询购立享优惠#长期有货 |
|||
Maxim |
24+ |
32-DIP |
30000 |
原厂原装,价格优势,欢迎洽谈! |
|||
MAXIM |
24+ |
EDIP-32 |
8500 |
只做原装正品假一赔十为客户做到零风险!! |
|||
Maxim |
26+ |
32-DIP |
60000 |
只有原装,可BOM表配单 |
DS1245规格书下载地址
DS1245参数引脚图相关
- f338
- F330
- f133
- f1212
- ex128
- et600
- ESD
- ep9315
- ep1c3t144c8n
- EMI滤波器
- em35
- EDA
- e251
- d类功放
- d触发器芯片
- d触发器
- dsp芯片
- dsp技术
- ds18b20
- ds1302
- DS1265Y
- DS1265W
- DS1260
- DS126
- DS1259
- DS1258Y
- DS1258W
- DS1254
- DS1251Y
- DS1251P
- DS1251
- DS1250Y
- DS1250W
- DS125
- DS1249Y
- DS1249W
- DS1248P
- DS1248
- DS1245YP-70+
- DS1245YP-100+
- DS1245Y-85+
- DS1245Y-70IND+
- DS1245Y-70+
- DS1245Y-120IND+
- DS1245Y-120+
- DS1245Y-100+
- DS1245Y
- DS1245WP-150+
- DS1245WP-100+
- DS1245W-150+
- DS1245W-100IND+
- DS1245W-100+
- DS1245W
- DS1245ABP-70IND+
- DS1245ABP-70+
- DS1245AB-70IND+
- DS1245AB-70+
- DS1245AB-120IND+
- DS1245AB-120+
- DS1245AB-100+
- DS1244YP-70+
- DS1244Y-70+
- DS1244Y
- DS1244W-120IND+
- DS1244W-120+
- DS1244P
- DS1244
- DS1243Y-120+
- DS1243Y
- DS1243
- DS1239
- DS1238S
- DS1238A
- DS1238
- DS1236A
- DS1236
- DS1235Y
- DS1233Z-5+T&R
- DS1233Z-5+
- DS1233Z-15+
- DS1233Z-10+T&R
- DS1233Z-10+
- DS1233MS-55+
- DS1233MS-5+
- DS1233MS-3+
- DS1233M-55+
- DS1233M-5+
- DS1233M
- DS1233DZ-5+T&R
- DS1233DZ-5+
- DS1233DZ-15+T&R
- DS1233DZ-15+
- DS1233DZ-10+T&R
- DS1233D
- DS1233A
- DS1233
- DS1232S
- DS1232N
- DS1232
- DS1231S
DS1245数据表相关新闻
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2020-10-28DS1259-电池管理芯片
特点 促进不间断电源 只有当主VCC是不可用的使用电池 低正向压降 电源故障信号中断的处理器，或写保护内存 功耗小于100 nA的电池电流 低电量警告信号 电池可电断开后命令 当VCC应用，电池会自动重新连接 配合DS1212非易失控制器×16片直接与备份16的RAM 可选的16引脚SOIC表面贴装封装 DS1259电池管理芯片是一个低成本的电池管理系统的便携性和非易失性电子设备。电池输入引脚连接到一个电池
2013-1-1DS1267-双数字电位器芯片
DS1267双数字电位器芯片由两个数字控制，固态电位器。每个电位器是由256个电阻部分。彼此之间的电阻节和电位器两端的雨刮器都可以访问的抽头点。中的地位电阻阵列上的雨刮器是由一个8位值控制抽头点连接到雨刮器输出。通过3线串行接口完成通信和控制设备。这个接口允许读取或写入设备抽头位置。（或堆叠）系列中增加的总电阻与两个电位器，可连接相同的分辨率。对于多个设备，单处理器的环境中，DS1267可级联或菊花链式。此功能提供一个单一的3线总线控制多台设备的。DS1267是提供了三个标准电阻值，其中包括10，50和100千欧版本。 该设备可用的软件包，包括一个14引脚DIP，16引脚SOIC，和20引脚T
2012-12-11
DdatasheetPDF页码索引
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