DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1 Features • Industry-leading ultra-low power consumption – 5Hz version: 0.54μA – 20Hz versions: 1.3μA – 80Hz version: 5.2μA • Operating VCC range: 1.65V to 5.5V • Operating temperature range: –40°C to +85°C • Magnetic threshold options (maximum BOP): – DG Version: 3.4mT – DU Version: 3.9

封装/外壳：TO-236-3，SC-59，SOT-23-3 功能：单极开关 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MAGNETIC SWITCH UNIPOLAR SOT23-3 传感器，变送器 磁性传感器 - 开关（固态）

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.72779 Mbytes Page：40 Pages

Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.38603 Mbytes Page：34 Pages

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.5915 Mbytes Page：37 Pages

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.5915 Mbytes Page：37 Pages

Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.38603 Mbytes Page：34 Pages

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.72779 Mbytes Page：40 Pages

封装/外壳：TO-236-3，SC-59，SOT-23-3 功能：单极开关 包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 描述：MAGNETIC SWITCH UNIPOLAR SOT23-3 传感器，变送器 磁性传感器 - 开关（固态）

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

18 (16/30) AWG Tinned Copper

文件：411.07 Kbytes Page：4 Pages

Quartz SMD, Ceramic

文件：77.21 Kbytes Page：1 Pages