DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

1 Features • Industry-leading ultra-low power consumption – 5Hz version: 0.54μA – 20Hz versions: 1.3μA – 80Hz version: 5.2μA • Operating VCC range: 1.65V to 5.5V • Operating temperature range: –40°C to +85°C • Magnetic threshold options (maximum BOP): – DG Version: 3.4mT – DU Version: 3.9

Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.38603 Mbytes Page：34 Pages

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.72779 Mbytes Page：40 Pages

Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.33158 Mbytes Page：30 Pages

Ultra-Low-Power Digital-Switch Hall Effect Sensor

文件：1.64706 Mbytes Page：33 Pages

DRV5032 Ultra-Low-Power Digital-Switch Hall Effect Sensor

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封装/外壳：4-XFDFN 裸露焊盘 功能：全极开关 包装：散装 描述：MAGNETIC SWITCH OMNIPOLAR 4X2SON 传感器，变送器 磁性传感器 - 开关（固态）

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

1 GHz to 60 GHz, Reflective, Silicon SPDT Switch

GENERAL DESCRIPTION The ADRF5032 is a reflective, single-pole double-throw (SPDT) switch manufactured using the silicon process. The ADRF5032 operates from 1 GHz to 60 GHz with insertion loss of lower than 2.0 dB and isolation of higher than 32 dB. The device has a RF input power handling cap

18 (16/30) AWG Tinned Copper

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Quartz SMD, Ceramic

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