HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

FEATURES HIGH OUTPUT CURRENT: 230mA SINGLE SUPPLY OPERATION: 5V 5MHz BANDWIDTH: 6Vp-p into 15W VERY LOW THD AT HIGH POWER: –72dBc at 6Vp-p, 100kHz, 100W LOW QUIESCENT CURRENT: 11mA FIXED DIFFERENTIAL GAIN: 3V/V APPLICATIONS xDSL TWISTED PAIR LINE DRIVER COMMUNICATIONS LINE DRIVER TRAN

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：293.71 Kbytes Page：13 Pages

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：107.41 Kbytes Page：9 Pages

丝印代码：DRV1100U；HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

FEATURES HIGH OUTPUT CURRENT: 230mA SINGLE SUPPLY OPERATION: 5V 5MHz BANDWIDTH: 6Vp-p into 15W VERY LOW THD AT HIGH POWER: –72dBc at 6Vp-p, 100kHz, 100W LOW QUIESCENT CURRENT: 11mA FIXED DIFFERENTIAL GAIN: 3V/V APPLICATIONS xDSL TWISTED PAIR LINE DRIVER COMMUNICATIONS LINE DRIVER TRAN

丝印代码：DRV1100U；HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

FEATURES HIGH OUTPUT CURRENT: 230mA SINGLE SUPPLY OPERATION: 5V 5MHz BANDWIDTH: 6Vp-p into 15W VERY LOW THD AT HIGH POWER: –72dBc at 6Vp-p, 100kHz, 100W LOW QUIESCENT CURRENT: 11mA FIXED DIFFERENTIAL GAIN: 3V/V APPLICATIONS xDSL TWISTED PAIR LINE DRIVER COMMUNICATIONS LINE DRIVER TRAN

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：107.41 Kbytes Page：9 Pages

封装/外壳：8-DIP（0.300"，7.62mm） 包装：卷带（TR） 描述：IC DRIVER 2/0 8DIP 集成电路（IC） 驱动器，接收器，收发器

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：293.71 Kbytes Page：13 Pages

封装/外壳：8-SOIC（0.154"，3.90mm 宽） 包装：管件 描述：IC DRIVER 2/0 8SOIC 集成电路（IC） 驱动器，接收器，收发器

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：107.41 Kbytes Page：9 Pages

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：293.71 Kbytes Page：13 Pages

HIGH POWER DIFFERENTIAL DRIVER AMPLIFIER

文件：293.71 Kbytes Page：13 Pages

Schottky Power Rectifier(Surface Mount Power Package)

Schottky Barrier Rectifier Surface Mount Power Package Schottky Power Rectifiers employ the use of the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suit

ULTRAFAST RECTIFIERS 1.0 AMPERE 900-1000 VOLTS

SWITCHMODE Power Rectifiers Ultrafast “E’’ Series with High Reverse Energy Capability . . . designed for use in switching power supplies, inverters and as free wheeling diodes, these state–of–the–art devices have the following features: • 20 mjoules Avalanche Energy Guaranteed • Excellent Prot

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Schottky Barrier Rectifiers Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overly contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N

DUAL SWITCHING REGULATOR CONTROL CIRCUIT

SEMICONDUCTOR SELECTION GUIDE Microcomputer IC Memory Semi-Custom IC Particular Purpose IC General Purpose Linear IC Transistor / Diode / Thyristor Microwave Device / Consumer Use High Frequency Device Optical Device Packages Index (Quick Reference by Type N