丝印代码：DP2525；Low Cost Primary Side Regulation(PSR) PWM Power Switch

FEATURES
Low Cost Solution Buil-in 800V power BJT
Multi-Mode PSR Control
Audio Noise Free Operation
±4 CC and CV Regulation
Optimized Dynamic Response
Low Standby Power

丝印代码：DP2525；Quasi-Resonant PSR CC/CV PWM Power Switch

FEATURES  Low Cost Solution Built-in 800V power BJT  Quasi-Resonant Primary Side Regulation (QR-PSR) Control with High Efficiency  Multi-Mode PSR Control  Fast Dynamic Response  Built-in Dynamic Base Drive  Audio Noise Free Operation  ±4 CC and CV Regulation  Low Standby Power

Low Cost Primary Side Regulation(PSR) PWM Power Switch

FEATURES
Low Cost Solution Buil-in 800V power BJT
Multi-Mode PSR Control
Audio Noise Free Operation
±4 CC and CV Regulation
Optimized Dynamic Response
Low Standby Power

Low Cost Primary Side Regulation(PSR) PWM Power Switch

FEATURES
Low Cost Solution Buil-in 800V power BJT
Multi-Mode PSR Control
Audio Noise Free Operation
±4 CC and CV Regulation
Optimized Dynamic Response
Low Standby Power

Low Cost Primary Side Regulation(PSR) PWM Power Switch

FEATURES
Low Cost Solution Buil-in 800V power BJT
Multi-Mode PSR Control
Audio Noise Free Operation
±4 CC and CV Regulation
Optimized Dynamic Response
Low Standby Power

AC-DC 转换器

AC-DC 转换器

AC-DC 转换器

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor in a plastic envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Diffused Power Transistor

GENERAL DESCRIPTION New generation, high-voltage, high-speed switching npn transistor with integrated damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of large screen colour television receivers up to 32 kHz.

Silicon Complementary Transistors High Current Switch

Features: • Low Collector–Emitter Saturation Voltage • High Current and High fT • Excellent Linearity of hFE • Fast Switching Time

Rectifier diodes schottky barrier

GENERAL DESCRIPTION Dual nickel silicide schottky barrier rectifier diodes in a plastic envelope featuring low forward voltage drop and absence of stored charge. These devices can withstand reverse voltage transients and have guaranteed reverse surge capability. The devices are intended for use i