金属氧化场效应管

MOSFET

MOSFET

NPN SILICON POWER (SWITCHING) TRANSISTOR

FEATURES * 2W POWER DISSIPATION * 12A Peak Pulse Current * Excellent HFE Characteristics up to 12 Amps * Extremely Low Saturation Voltage E.g. 8mv Typ. * Extremely Low Equivalent On-resistance; RCE(sat) 50mΩ at 3A

Varactor Diode

Description: The NTE617 is a dual voltage–variable capacitance diode designed for FM tuning, general frequency control and tuning, or any top–of–the–line application requiring back–to–back diode configurations for minimum signal distortion and detuning. This device is supplied in the popular TO92

Low-voltage high performance mixer FM IF system

DESCRIPTION The SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator and audio and RSSI op amps. The SA617 i

Low-voltage high performance mixer FM IF system

DESCRIPTION The SA617 is a low voltage high performance monolithic FM IF system incorporating a mixer/oscillator, two limiting intermediate frequency amplifiers, quadrature detector, logarithmic received signal strength indicator (RSSI), voltage regulator and audio and RSSI op amps. The SA617 i

DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS

SM-8 DUAL NPN MEDIUM POWER HIGH GAIN TRANSISTORS