| 型号 | 功能描述 | 生产厂家 企业 | LOGO | 操作 |
|---|---|---|---|---|
N-Channel 60-V (D-S) MOSFET FEATURES • 175 °C Junction Temperature • TrenchFET® Power MOSFET • Material categorization: | VBSEMI 微碧半导体 |   | ||
N-Channel Enhancement Mode Field Effect Transistor Features: ● Low Gate Charge for Fast Switching Application ● Low RDS(ON) to Minimize Conductive Loss ● 100% EAS Guaranteed ● Optimized V(BR)DSS Ruggedness ● Lead-Free,RoHS Compliant Description: The ADM75N06 uses advanced trench technology and design to provide excellent RDS(ON) with | ADV 爱德微 | | ||
N-Channel Enhancement Mode Field Effect Transistor FEATURES ■ 60V, 87A, RDS(ON) = 12mΩ @VGS = 10V. ■ Super high dense cell design for extremely low RDS(ON). ■ High power and current handing capability. ■ Lead free product is acquired. ■ TO-220 & TO-263 package. | CET 华瑞 | | ||
Fast Switching Speed 文件：65.68 Kbytes Page：2 Pages | ISC 无锡固电 | | ||
N-Channel 60-V (D-S) MOSFET 文件：1.27408 Mbytes Page：7 Pages | VBSEMI 微碧半导体 | |
| IC供应商 | 芯片型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
VBSEMI/微碧半导体 |
24+ |
TO263 |
7800 |
全新原厂原装正品现货,低价出售,实单可谈 |
|||
CET |
24+ |
5000 |
|||||
CET |
24+ |
TO-263 |
90000 |
进口原装现货假一罚十价格合理 |
|||
CET/華瑞 |
20+ |
TO-263 |
300000 |
现货很近!原厂很远!只做原装 |
|||
- |
23+ |
NA |
10000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
|||
CET/華瑞 |
2022+ |
TO-263 |
800 |
原厂代理 终端免费提供样品 |
|||
CET/華瑞 |
2511 |
TO-263 |
360000 |
电子元器件采购降本30%!原厂直采,砍掉中间差价 |
|||
NK/南科功率 |
2025+ |
TO-263 |
986966 |
国产 |
|||
VB |
25+ |
T0-263 |
1015 |
原装正品,假一罚十! |
|||
Central |
24+ |
SOP-4 |
6000 |
公司现货库存,支持实单 |
DOD75N06芯片相关品牌
DOD75N06规格书下载地址
DOD75N06参数引脚图相关
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DOD75N06数据表相关新闻
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支持实单 价格优势 有单必成
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2019-4-27
DdatasheetPDF页码索引
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